OPT OpenIR

浏览/检索结果: 共13条,第1-10条 帮助

限定条件    
已选(0)清除 条数/页:   排序方式:
Continuously varifocal metalens for broadband achromatic focusing of terahertz waves 期刊论文
JOURNAL OF SCIENCE-ADVANCED MATERIALS AND DEVICES, 2023, 卷号: 8, 期号: 3
作者:  Jiang, Xiao-Qiang;  Fan, Wen-Hui;  Zhao, Lv-Rong;  Chen, Xu;  Qin, Chong;  Yan, Hui;  Wu, Qi;  Ju, Pei
Adobe PDF(2746Kb)  |  收藏  |  浏览/下载:37/1  |  提交时间:2023/08/14
Terahertz  Metalens  Varifocal  Broadband achromatic  Indium antimonide  
Secondary electron emission characteristics of the Al2O3/MgO double-layer structure prepared by atomic layer deposition 期刊论文
CERAMICS INTERNATIONAL, 2021, 卷号: 47, 期号: 7, 页码: 9866-9872
作者:  Cao, Weiwei;  Wang, Bo;  Yang, Yang;  Zhu, Bingli;  Guo, Junjiang;  Xu, Peng;  Bai, Xiaohong;  Qin, Junjun;  Wang, Chao;  Zhu, Jingping;  Bai, Yonglin
Adobe PDF(6956Kb)  |  收藏  |  浏览/下载:250/4  |  提交时间:2021/04/19
Al2O3 film  MgO film  Secondary electron emission  Atomic layer deposition  Microchannel plate  
Catalyst-free growth of dense gamma-In2Se3 nanosheet arrays and their application in photoelectric detectors 期刊论文
NANOTECHNOLOGY, 2020, 卷号: 31, 期号: 19
作者:  Kou, Yumeng;  Chen, Lida;  Mu, Jianglong;  Miao, Hui;  Wang, Yishan;  Hu, Xiaoyun;  Teng, Feng
Adobe PDF(1726Kb)  |  收藏  |  浏览/下载:177/1  |  提交时间:2020/06/23
photodetector  In2Se3  nanosheets array  response speed  
Catalyst-free growth of dense γ-In2Se3 nanosheet arrays and their application in photoelectric detectors 期刊论文
Nanotechnology, 2020, 卷号: 31, 期号: 19
作者:  Kou, Yumeng;  Chen, Lida;  Mu, Jianglong;  Miao, Hui;  Wang, Yishan;  Hu, Xiaoyun;  Teng, Feng
Adobe PDF(1662Kb)  |  收藏  |  浏览/下载:179/0  |  提交时间:2020/03/30
photodetector  In2Se3  nanosheets array  response speed  
Sulfide treatment passivation of mid-/long-wave dual-color infrared detectors based on type-II InAs/GaSb superlattices 期刊论文
OPTICAL AND QUANTUM ELECTRONICS, 2019, 卷号: 51, 期号: 3
作者:  Guo, Chunyan;  Jiang, Zhi;  Jiang, Dongwei;  Wang, Guowei;  Xu, Yingqiang;  Wang, Tao;  Tian, Jinshou;  Wu, Zhaoxin;  Niu, Zhichuan
Adobe PDF(1709Kb)  |  收藏  |  浏览/下载:242/6  |  提交时间:2019/03/21
Dual-color infrared detectors  InAs  GaSb superlattices  Molecular beam epitaxy  Sulfide treatment passivation  
Wide spectrum responsivity detectors from visible to mid-infrared based on antimonide 期刊论文
Infrared Physics and Technology, 2019, 卷号: 96, 页码: 1-6
作者:  Guo, Chunyan;  Sun, Yaoyao;  Jia, Qingxuan;  Jiang, Zhi;  Jiang, Dongwei;  Wang, Guowei;  Xu, Yingqiang;  Wang, Tao;  Tian, Jinshou;  Wu, Zhaoxin;  Niu, Zhichuan
Adobe PDF(1780Kb)  |  收藏  |  浏览/下载:183/3  |  提交时间:2018/12/03
Two-dimensional electron gas characteristics of InP-based high electron mobility transistor terahertz detector 期刊论文
CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 4
作者:  Li, Jin-Lun;  Cui, Shao-Hui;  Xu, Jian-Xing;  Cui, Xiao-Ran;  Guo, Chun-Yan;  Ma, Ben;  Ni, Hai-Qiao;  Niu, Zhi-Chuan;  Ni, HQ (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices, Beijing 100083, Peoples R China.
Adobe PDF(1077Kb)  |  收藏  |  浏览/下载:256/0  |  提交时间:2018/05/14
Thz Detector  High Electron Mobility Transistor  Two-dimensional Electron Gas  Inp  
Formation, element-migration and broadband luminescence in quantum dot-doped glass fibers 期刊论文
OPTICS EXPRESS, 2017, 卷号: 25, 期号: 17, 页码: 19691-19700
作者:  Huang, Xiongjian;  Fang, Zaijin;  Peng, Zixing;  Ma, Zhijun;  Guo, Haitao;  Qiu, Jianrong;  Dong, Guoping;  Dong, Guoping (dgp@scut.edu.cn)
Adobe PDF(2886Kb)  |  收藏  |  浏览/下载:262/2  |  提交时间:2017/09/15
Transfer process of LT-GaAs epitaxial films for on-chip terahertz antenna integrated device 期刊论文
JOURNAL OF INFRARED AND MILLIMETER WAVES, 2017, 卷号: 36, 期号: 2, 页码: 220-+
作者:  Guo Chun-Yan;  Xu Jian-Xing;  Peng Hong-Ling;  Ni Hai-Qiao;  Wang Tao;  Tian Jin-Shou;  Niu Zhi-Chuan;  Wu Zhao-Xin;  Zuo Jian;  Zhang Cun-Lin;  Niu, ZC (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlatt, Beijing 100083, Peoples R China.
Adobe PDF(3389Kb)  |  收藏  |  浏览/下载:300/4  |  提交时间:2017/06/06
On-chip Thz Antenna Integrated Device  Lt-gaas  Epitaxial Layer Transfer  Wet Chemical Etching  
Research on the high indium content InGaAs multiple quantum wells wafers for lambda > 1.55 mu m laser diodes 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2015, 卷号: 631, 页码: 283-287
作者:  Lin, Tao;  Sun, Hang;  Zhang, Haoqing;  Wang, Yonggang;  Lin, Nan;  Ma, Xiaoyu
Adobe PDF(672Kb)  |  收藏  |  浏览/下载:182/1  |  提交时间:2015/07/15
Laser Diode  Mocvd  Gaas  Inp