Xi'an Institute of Optics and Precision Mechanics,CAS
| Two-dimensional electron gas characteristics of InP-based high electron mobility transistor terahertz detector | |
| Li, Jin-Lun1,2; Cui, Shao-Hui1; Xu, Jian-Xing2,4; Cui, Xiao-Ran2,5; Guo, Chun-Yan2,6; Ma, Ben2,3; Ni, Hai-Qiao2,3; Niu, Zhi-Chuan2,3; Ni, HQ (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices, Beijing 100083, Peoples R China. | |
| 作者部门 | 精密物理量测量实验室 |
| 2018-04-01 | |
| 发表期刊 | CHINESE PHYSICS B
 |
| ISSN | 1674-1056 |
| 卷号 | 27期号:4 |
| 产权排序 | 6 |
| 摘要 | The samples of InxGa1-xAs/In0.52Al0.48As two-dimensional electron gas (2DEG) are grown by molecular beam epitaxy (MBE). In the sample preparation process, the In content and spacer layer thickness are changed and two kinds of methods, i.e., contrast body doping and delta-doping are used. The samples are analyzed by the Hall measurements at 300 K and 77 K. The InxGa1-xAs/In0.52Al0.48As 2DEG channel structures with mobilities as high as 10289 cm(2)/V.s (300 K) and 42040 cm(2)/V.s (77 K) are obtained, and the values of carrier concentration (N-c) are 3.465 x 10(12)/cm(2) and 2.502 x 10(12)/cm(2), respectively. The THz response rates of InP-based high electron mobility transistor (HEMT) structures with different gate lengths at 300 K and 77 K temperatures are calculated based on the shallow water wave instability theory. The results provide a reference for the research and preparation of InP-based HEMT THz detectors. |
| 文章类型 | Article |
| 关键词 | Thz Detector High Electron Mobility Transistor Two-dimensional Electron Gas Inp |
| 学科领域 | Physics, Multidisciplinary |
| WOS标题词 | Science & Technology ; Physical Sciences |
| DOI | 10.1088/1674-1056/27/4/047101 |
| 收录类别 | SCI ; EI |
| 关键词[WOS] | FIELD-EFFECT TRANSISTOR ; DEVICES ; FLUID |
| 语种 | 英语 |
| WOS研究方向 | Physics |
| 项目资助者 | Foundation for Scientific Instrument and Equipment Development, Chinese Academy of Sciences(YJKYYQ20170032) ; National Natural Science Foundation of China(61435012) |
| WOS类目 | Physics, Multidisciplinary |
| WOS记录号 | WOS:000430619200001 |
| EI入藏号 | 20181905174638 |
| 引用统计 | |
| 文献类型 | 期刊论文 |
| 条目标识符 | http://ir.opt.ac.cn/handle/181661/30080 |
| 专题 | 条纹相机工程中心 |
| 通讯作者 | Ni, HQ (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices, Beijing 100083, Peoples R China. |
| 作者单位 | 1.Army Engn Univ, Dept Missile Engn, Shijiazhuang Campus, Shijiazhuang 050003, Hebei, Peoples R China 2.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices, Beijing 100083, Peoples R China 3.Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China 4.China Acad Engn Phys, Microsyst & Terahertz Res Ctr, Chengdu 610200, Sichuan, Peoples R China 5.Xidian Univ, Wide Bandgap Semicond Technol Disciplines State L, Xian 710071, Shaanxi, Peoples R China 6.Chinese Acad Sci, Xian Inst Opt & Precis Mech, Key Lab Ultrafast Photoelect Diagnost Technol, Xian 710119, Shaanxi, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, Jin-Lun,Cui, Shao-Hui,Xu, Jian-Xing,et al. Two-dimensional electron gas characteristics of InP-based high electron mobility transistor terahertz detector[J]. CHINESE PHYSICS B,2018,27(4). |
| APA | Li, Jin-Lun.,Cui, Shao-Hui.,Xu, Jian-Xing.,Cui, Xiao-Ran.,Guo, Chun-Yan.,...&Ni, HQ .(2018).Two-dimensional electron gas characteristics of InP-based high electron mobility transistor terahertz detector.CHINESE PHYSICS B,27(4). |
| MLA | Li, Jin-Lun,et al."Two-dimensional electron gas characteristics of InP-based high electron mobility transistor terahertz detector".CHINESE PHYSICS B 27.4(2018). |
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| Two-dimensional elec（1077KB） | 期刊论文 | 作者接受稿 | 开放获取 | CC BY-NC-SA | 浏览 请求全文 | |
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