Transfer process of LT-GaAs epitaxial films for on-chip terahertz antenna integrated device

doi:10.11972/j.issn.1001-9014.2017.02.016

OPT OpenIR > 条纹相机工程中心

	Transfer process of LT-GaAs epitaxial films for on-chip terahertz antenna integrated device
其他题名	片上太赫兹天线集成器件LT_GaAs外延转移工艺
	Guo Chun-Yan 1,2,3; Xu Jian-Xing 3,4; Peng Hong-Ling 5; Ni Hai-Qiao 4; Wang Tao1 ; Tian Jin-Shou1 ; Niu Zhi-Chuan 4; Wu Zhao-Xin 2; Zuo Jian 6; Zhang Cun-Lin 6; Niu, ZC (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlatt, Beijing 100083, Peoples R China.
作者部门	精密物理量测量实验室
	2017-04-01
发表期刊	JOURNAL OF INFRARED AND MILLIMETER WAVES
ISSN	1001-9014
卷号	36 期号:2 页码:220-+
产权排序	1
摘要	A process for LT-GaAs used as photoconductive switch in epitaxial layer transfer of on-chip THz antenna integrated device was provided. Hall indicated resistivity of the epitaxial materials gained by MBE was about 10(6)Omega center dot cm. HNO3-NH4OH-H2O-C3H8O7 center dot H2O-H2O2-HCl and wet chemical etching were used to etch epitaxial materials grown by MBE. Gained the structure that 1.5 mu m LT-GaAs bounded with COP after lift-off of SI-GaAs and Al0.9Ga0.1As. AFM SEM and high-power microscope indicated that the structure was flat and smooth after lift-off. RMS = 2.28 nm. EDAX indicated there wasn't Al in this structure. It can be used to make photoconductive switch.
文章类型	Article
关键词	On-chip Thz Antenna Integrated Device Lt-gaas Epitaxial Layer Transfer Wet Chemical Etching
学科领域	Optics
WOS标题词	Science & Technology ; Physical Sciences
DOI	10.11972/j.issn.1001-9014.2017.02.016
收录类别	SCI ; EI ; CSCD
关键词[WOS]	TRANSMISSION-LINES
语种	英语
WOS研究方向	Optics
项目资助者	National Natural Science Foundation of China(11204190 ; General Program of Science and Technology Development Project of Beijing Municipal Education Commission of China(KM201610028005) ; National Key Scientific Instrument and Equipment Development Project of China(2012YQ140005) ; 61274125)
WOS类目	Optics
WOS记录号	WOS:000400884100016
引用统计	被引频次：5[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.opt.ac.cn/handle/181661/28941
专题	条纹相机工程中心
通讯作者	Niu, ZC (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlatt, Beijing 100083, Peoples R China.
作者单位	1.Chinese Acad Sci, Xian Inst Opt & Precis Mech, Key Lab Ultrafast Photoelect Diagnost Technol, Xian 710119, Peoples R China 2.Xi An Jiao Tong Univ, Xian 710049, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 4.Chinese Acad Sci, Inst Semicond, State Key Lab Superlatt, Beijing 100083, Peoples R China 5.Chinese Acad Sci, Inst Semicond, Lab Solid State Photoelect Informat Technol, Beijing 100083, Peoples R China 6.Capital Normal Univ, Dept Phys, Minist Educ, Key Lab Terahertz Optoelect, Beijing 100048, Peoples R China
推荐引用方式 GB/T 7714	Guo Chun-Yan,Xu Jian-Xing,Peng Hong-Ling,et al. Transfer process of LT-GaAs epitaxial films for on-chip terahertz antenna integrated device[J]. JOURNAL OF INFRARED AND MILLIMETER WAVES,2017,36(2):220-+.
APA	Guo Chun-Yan.,Xu Jian-Xing.,Peng Hong-Ling.,Ni Hai-Qiao.,Wang Tao.,...&Niu, ZC .(2017).Transfer process of LT-GaAs epitaxial films for on-chip terahertz antenna integrated device.JOURNAL OF INFRARED AND MILLIMETER WAVES,36(2),220-+.
MLA	Guo Chun-Yan,et al."Transfer process of LT-GaAs epitaxial films for on-chip terahertz antenna integrated device".JOURNAL OF INFRARED AND MILLIMETER WAVES 36.2(2017):220-+.

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