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Sulfide treatment passivation of mid-/long-wave dual-color infrared detectors based on type-II InAs/GaSb superlattices
Guo, Chunyan1,2,3; Jiang, Zhi3,4; Jiang, Dongwei3,4; Wang, Guowei3,4; Xu, Yingqiang3,4; Wang, Tao1; Tian, Jinshou1,5; Wu, Zhaoxin2,5; Niu, Zhichuan3,4
作者部门条纹相机工程中心
2019-03
发表期刊OPTICAL AND QUANTUM ELECTRONICS
ISSN0306-8919;1572-817X
卷号51期号:3
产权排序1
摘要

The surface passivation of mid-/long-wave dual-color infrared detectors based on type-II InAs/GaSb superlattices(T2SLs) photodetectors employing diverse voltage and current conditions of sulfide treatment passivation was presented. The superlattices were grown on GaSb substrate by molecular beam epitaxy technology. The circle pixel devices in the diameter of 200m with 5m at mid-infrared and 14m at long-infrared 100% cutoff wavelength were fabricated. Compared to only SiO2 encapsulation passivation and unpassivated detectors, the dark current density, which takes into account surface leakage current, was reduced by approximately three orders of magnitude and the R0A-product was six times higher by sulfide treatment. Besides, detectors passivated through 22V 15mA sulfur treated, the responsivity of was 0.95A/W and QE was 0.44 at 2.6m. As for the wavelength of 5.3m, the responsivity and QE were 1.95 A/W and 0.45 severally.

关键词Dual-color infrared detectors InAs GaSb superlattices Molecular beam epitaxy Sulfide treatment passivation
DOI10.1007/s11082-019-1779-y
收录类别SCI ; EI
语种英语
WOS记录号WOS:000460035600006
出版者SPRINGER
EI入藏号20191006587553
引用统计
被引频次:7[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.opt.ac.cn/handle/181661/31209
专题条纹相机工程中心
通讯作者Niu, Zhichuan
作者单位1.Chinese Acad Sci, Xian Inst Opt & Precis Mech, Key Lab Ultrafast Photoelect Diagnost Technol, Xian 710119, Shaanxi, Peoples R China
2.Chinese Acad Sci, Key Lab Photon Technol Informat, Sch Elect & Informat Engn, Key Lab Phys Elect & Devices,Minist Educ, Xian 710119, Shaanxi, Peoples R China
3.Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
4.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattice & Microstruct, Beijing 100083, Peoples R China
5.Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, Taiyuan 030006, Peoples R China
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Guo, Chunyan,Jiang, Zhi,Jiang, Dongwei,et al. Sulfide treatment passivation of mid-/long-wave dual-color infrared detectors based on type-II InAs/GaSb superlattices[J]. OPTICAL AND QUANTUM ELECTRONICS,2019,51(3).
APA Guo, Chunyan.,Jiang, Zhi.,Jiang, Dongwei.,Wang, Guowei.,Xu, Yingqiang.,...&Niu, Zhichuan.(2019).Sulfide treatment passivation of mid-/long-wave dual-color infrared detectors based on type-II InAs/GaSb superlattices.OPTICAL AND QUANTUM ELECTRONICS,51(3).
MLA Guo, Chunyan,et al."Sulfide treatment passivation of mid-/long-wave dual-color infrared detectors based on type-II InAs/GaSb superlattices".OPTICAL AND QUANTUM ELECTRONICS 51.3(2019).
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