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Two-dimensional electron gas characteristics of InP-based high electron mobility transistor terahertz detector 期刊论文
CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 4
Authors:  Li, Jin-Lun;  Cui, Shao-Hui;  Xu, Jian-Xing;  Cui, Xiao-Ran;  Guo, Chun-Yan;  Ma, Ben;  Ni, Hai-Qiao;  Niu, Zhi-Chuan;  Ni, HQ (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices, Beijing 100083, Peoples R China.
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Thz Detector  High Electron Mobility Transistor  Two-dimensional Electron Gas  Inp  
Transfer process of LT-GaAs epitaxial films for on-chip terahertz antenna integrated device 期刊论文
JOURNAL OF INFRARED AND MILLIMETER WAVES, 2017, 卷号: 36, 期号: 2, 页码: 220-+
Authors:  Guo Chun-Yan;  Xu Jian-Xing;  Peng Hong-Ling;  Ni Hai-Qiao;  Wang Tao;  Tian Jin-Shou;  Niu Zhi-Chuan;  Wu Zhao-Xin;  Zuo Jian;  Zhang Cun-Lin;  Niu, ZC (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlatt, Beijing 100083, Peoples R China.
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On-chip Thz Antenna Integrated Device  Lt-gaas  Epitaxial Layer Transfer  Wet Chemical Etching  
四波长输出半导体激光器及其制备方法 专利
专利类型: 发明申请, 专利号: CN106451076A, 申请日期: 2017-02-22, 公开日期: 2017-02-22
Inventors:  魏思航;  张宇;  廖永平;  倪海桥;  牛智川
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一种电致单光子源器件及其制备方法 专利
专利类型: 发明申请, 专利号: CN106099642A, 申请日期: 2016-11-09, 公开日期: 2016-11-09
Inventors:  马奔;  陈泽升;  尚向军;  倪海桥;  牛智川
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硅基半导体超短脉冲激光器 专利
专利类型: 授权发明, 专利号: CN103414106B, 申请日期: 2015-07-15, 公开日期: 2015-07-15
Inventors:  丁颖;  倪海桥;  李密锋;  喻颖;  查国伟;  徐建新;  王莉娟;  牛智川
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InGaAs-MSM photodetector with low dark current 期刊论文
Guangzi Xuebao/Acta Photonica Sinica, 2015, 卷号: 44, 期号: 6
Authors:  Yan, Xin;  Wang, Tao;  Yin, Fei;  Ni, Hai-Qiao;  Niu, Zhi-Chuan;  Xin, Li-Wei;  Tian, Jin-Shou
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基于高折射率对比度光栅结构的单光子发射器及其制作方法 专利
专利类型: 发明申请, 专利号: CN103532010A, 申请日期: 2014-01-22, 公开日期: 2014-01-22
Inventors:  王莉娟;  喻颖;  査国伟;  徐建星;  倪海桥;  牛智川
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多层量子点隧道结串联的有源区宽带增益结构 专利
专利类型: 发明申请, 专利号: CN102832538A, 申请日期: 2012-12-19, 公开日期: 2012-12-19
Inventors:  倪海桥;  丁颖;  李密锋;  喻颖;  査国伟;  牛智川
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砷化镓基5微米量子阱结构及其外延生长方法 专利
专利类型: 授权发明, 专利号: CN100382347C, 申请日期: 2008-04-16, 公开日期: 2008-04-16
Inventors:  牛智川;  倪海桥;  韩勤;  张石勇;  吴东海;  赵欢;  杨晓红;  彭红玲;  周志强;  熊永华;  吴荣汉
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高铟组分镓砷/铟镓砷量子阱结构及其制备方法 专利
专利类型: 发明申请, 专利号: CN1624996A, 申请日期: 2005-06-08, 公开日期: 2005-06-08
Inventors:  牛智川;  徐晓华;  倪海桥;  徐应强;  韩勤;  吴荣汉
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