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Catalyst-free growth of dense γ-In2Se3 nanosheet arrays and their application in photoelectric detectors 期刊论文
Nanotechnology, 2020, 卷号: 31, 期号: 19
作者:  Kou, Yumeng;  Chen, Lida;  Mu, Jianglong;  Miao, Hui;  Wang, Yishan;  Hu, Xiaoyun;  Teng, Feng
Adobe PDF(1662Kb)  |  收藏  |  浏览/下载：181/0  |  提交时间：2020/03/30
photodetector  In2Se3  nanosheets array  response speed  
Sulfide treatment passivation of mid-/long-wave dual-color infrared detectors based on type-II InAs/GaSb superlattices 期刊论文
OPTICAL AND QUANTUM ELECTRONICS, 2019, 卷号: 51, 期号: 3
作者:  Guo, Chunyan;  Jiang, Zhi;  Jiang, Dongwei;  Wang, Guowei;  Xu, Yingqiang;  Wang, Tao;  Tian, Jinshou;  Wu, Zhaoxin;  Niu, Zhichuan
Adobe PDF(1709Kb)  |  收藏  |  浏览/下载：244/6  |  提交时间：2019/03/21
Dual-color infrared detectors  InAs  GaSb superlattices  Molecular beam epitaxy  Sulfide treatment passivation  
Wide spectrum responsivity detectors from visible to mid-infrared based on antimonide 期刊论文
Infrared Physics and Technology, 2019, 卷号: 96, 页码: 1-6
作者:  Guo, Chunyan;  Sun, Yaoyao;  Jia, Qingxuan;  Jiang, Zhi;  Jiang, Dongwei;  Wang, Guowei;  Xu, Yingqiang;  Wang, Tao;  Tian, Jinshou;  Wu, Zhaoxin;  Niu, Zhichuan
Adobe PDF(1780Kb)  |  收藏  |  浏览/下载：184/3  |  提交时间：2018/12/03
Two-dimensional electron gas characteristics of InP-based high electron mobility transistor terahertz detector 期刊论文
CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 4
作者:  Li, Jin-Lun;  Cui, Shao-Hui;  Xu, Jian-Xing;  Cui, Xiao-Ran;  Guo, Chun-Yan;  Ma, Ben;  Ni, Hai-Qiao;  Niu, Zhi-Chuan;  Ni, HQ (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices, Beijing 100083, Peoples R China.
Adobe PDF(1077Kb)  |  收藏  |  浏览/下载：257/0  |  提交时间：2018/05/14
Thz Detector  High Electron Mobility Transistor  Two-dimensional Electron Gas  Inp  
Formation, element-migration and broadband luminescence in quantum dot-doped glass fibers 期刊论文
OPTICS EXPRESS, 2017, 卷号: 25, 期号: 17, 页码: 19691-19700
作者:  Huang, Xiongjian;  Fang, Zaijin;  Peng, Zixing;  Ma, Zhijun;  Guo, Haitao;  Qiu, Jianrong;  Dong, Guoping;  Dong, Guoping (dgp@scut.edu.cn)
Adobe PDF(2886Kb)  |  收藏  |  浏览/下载：266/2  |  提交时间：2017/09/15
Transfer process of LT-GaAs epitaxial films for on-chip terahertz antenna integrated device 期刊论文
JOURNAL OF INFRARED AND MILLIMETER WAVES, 2017, 卷号: 36, 期号: 2, 页码: 220-+
作者:  Guo Chun-Yan;  Xu Jian-Xing;  Peng Hong-Ling;  Ni Hai-Qiao;  Wang Tao;  Tian Jin-Shou;  Niu Zhi-Chuan;  Wu Zhao-Xin;  Zuo Jian;  Zhang Cun-Lin;  Niu, ZC (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlatt, Beijing 100083, Peoples R China.
Adobe PDF(3389Kb)  |  收藏  |  浏览/下载：304/4  |  提交时间：2017/06/06
On-chip Thz Antenna Integrated Device  Lt-gaas  Epitaxial Layer Transfer  Wet Chemical Etching  
Research on the high indium content InGaAs multiple quantum wells wafers for lambda > 1.55 mu m laser diodes 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2015, 卷号: 631, 页码: 283-287
作者:  Lin, Tao;  Sun, Hang;  Zhang, Haoqing;  Wang, Yonggang;  Lin, Nan;  Ma, Xiaoyu
Adobe PDF(672Kb)  |  收藏  |  浏览/下载：186/1  |  提交时间：2015/07/15
Laser Diode  Mocvd  Gaas  Inp  
Growth and characterization of InAsSb alloys by metalorganic chemical vapour deposition 期刊论文
CHINESE PHYSICS B, 2009, 卷号: 18, 期号: 1, 页码: 320-323
作者:  Yan Jun-Feng;  Wang Tao;  Wang Jing-Wei;  Zhang Zhi-Yong;  Zhao Wu
Adobe PDF(2341Kb)  |  收藏  |  浏览/下载：340/1  |  提交时间：2010/01/12
Metalorganic Chemical Vapour Deposition (Mocvd)  Antimonides  Semiconducting Indium Compounds  
Influence of Graphene Stability on III-Nitride Remote Epitaxy for Exfoliation 期刊论文
ACS APPLIED NANO MATERIALS
作者:  Han, Xu;  Yu, Jiadong;  Yang, Peilong;  Liu, Bo;  Wang, Xun;  Hao, Zhibiao;  Luo, Yi;  Sun, Changzheng;  Han, Yanjun;  Xiong, Bing;  Wang, Jian;  Li, Hongtao;  Wang, Lai
Adobe PDF(7964Kb)  |  收藏  |  浏览/下载：81/1  |  提交时间：2023/08/28
III-nitride  exfoliation  MOCVD  graphene  remote epitaxy