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Growth and characterization of InAsSb alloys by metalorganic chemical vapour deposition
Yan Jun-Feng1; Wang Tao2; Wang Jing-Wei2; Zhang Zhi-Yong1; Zhao Wu1,2
2009
发表期刊CHINESE PHYSICS B
卷号18期号:1页码:320-323
摘要Low pressure metalorganic chemical vapour deposition (LP-MOCVD) growth and characteristics of InAssb on (100) Gasb substrates are investigated. Mirror-like surfaces with a minimum lattice mismatch are obtained. The samples are studied by photoluminescence spectra, and the output is 3.17 mu m in wavelength. The surface of InAssb epilayer shows that its morphological feature is dependent on buffer layer. With an InAs buffer layer used, the best surface is obtained. The InAssb film shows to be of n-type conduction with an electron concentration of 8.52 x 10(16) cm(-3).
文章类型Article
关键词Metalorganic Chemical Vapour Deposition (Mocvd) Antimonides Semiconducting Indium Compounds
WOS标题词Science & Technology ; Physical Sciences
收录类别SCI ; EI
关键词[WOS]MU-M ; GASB ; TEMPERATURE ; GAINASSB ; MOCVD
语种英语
WOS研究方向Physics
WOS类目Physics, Multidisciplinary
WOS记录号WOS:000262494700052
引用统计
被引频次:1[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.opt.ac.cn/handle/181661/5352
专题光电子学研究室
作者单位1.Northwestern Univ, Sch Informat Sci & Technol, Xian 710069, Peoples R China
2.Chinese Acad Sci, Xian Inst Opt & Precis Mech, Xian 710068, Peoples R China
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GB/T 7714
Yan Jun-Feng,Wang Tao,Wang Jing-Wei,et al. Growth and characterization of InAsSb alloys by metalorganic chemical vapour deposition[J]. CHINESE PHYSICS B,2009,18(1):320-323.
APA Yan Jun-Feng,Wang Tao,Wang Jing-Wei,Zhang Zhi-Yong,&Zhao Wu.(2009).Growth and characterization of InAsSb alloys by metalorganic chemical vapour deposition.CHINESE PHYSICS B,18(1),320-323.
MLA Yan Jun-Feng,et al."Growth and characterization of InAsSb alloys by metalorganic chemical vapour deposition".CHINESE PHYSICS B 18.1(2009):320-323.
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