OPT OpenIR

浏览/检索结果: 共8条,第1-8条 帮助

限定条件                    
已选(0)清除 条数/页:   排序方式:
Cubic MgxZn1-xO films grown on Si(111) 期刊论文
JOURNAL OF INORGANIC MATERIALS, 2003, 卷号: 18, 期号: 6, 页码: 1385-1388
作者:  Qiu, DJ;  Wu, HZ;  Chen, NB;  Tian, WJ
Adobe PDF(164Kb)  |  收藏  |  浏览/下载:224/1  |  提交时间:2015/11/12
Reactive E-beam Evaporation  Cubic Mgxzn1-xo Film  
High-quality GaN grown by gas-source MBE 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 227, 页码: 386-389
作者:  Wang, JX;  Sun, DZ;  Wang, XL;  Li, JM;  Zeng, YP;  Hou, X;  Lin, LY
Adobe PDF(100Kb)  |  收藏  |  浏览/下载:234/0  |  提交时间:2015/11/09
Characterization  Molecular Beam Epitaxy  Gallium Compounds  Nitrides  Piezoelectric Materials  Semiconducting Gallium Compounds  
Simple technique for testing deep aspherical surfaces 期刊论文
OPTICAL ENGINEERING, 1999, 卷号: 38, 期号: 4, 页码: 650-654
作者:  Yun, ZS;  Lam, YL;  Zhou, Y;  Li, YL;  Liu, ZB;  Liu, J
Adobe PDF(259Kb)  |  收藏  |  浏览/下载:199/0  |  提交时间:2015/11/03
Aspheric Surface  Liquid Crystal  Optical Testing  Interferometry  
The forward and inverse models in time-resolved optical tomography imaging and their finite-element method solutions 期刊论文
IMAGE AND VISION COMPUTING, 1998, 卷号: 16, 期号: 9-10, 页码: 703-712
作者:  Gao, F;  Niu, H;  Zhao, H;  Zhang, H
Adobe PDF(924Kb)  |  收藏  |  浏览/下载:176/0  |  提交时间:2015/10/21
Optical Tomography  Finite-element Method  Image Reconstruction  Inverse Problem  
Study of GSMBE growth and characteristics of high-quality strained In0.63Ga0.37As/InP quantum wells 期刊论文
JOURNAL OF CRYSTAL GROWTH, 1997, 卷号: 180, 期号: 1, 页码: 22-26
作者:  Wang, XL;  Sun, DZ;  Kong, MY;  Hou, X;  Zeng, YP
Adobe PDF(330Kb)  |  收藏  |  浏览/下载:122/0  |  提交时间:2018/06/13
Quantum Wells  Gsmbe  Ingaas/inp  Photoluminescence  
Studies on deep levels in GaAs epilayers grown on Si by metal-organic chemical vapour deposition .4. 0.96 eV photoluminescence emission 期刊论文
JOURNAL OF MATERIALS SCIENCE LETTERS, 1996, 卷号: 15, 期号: 3, 页码: 189-191
作者:  Liang, JC;  Zhao, JL;  Gao, Y;  Dou, K;  Huang, SH;  Yu, JQ;  Gao, HK
Adobe PDF(227Kb)  |  收藏  |  浏览/下载:126/0  |  提交时间:2018/06/13
STUDIES ON DEEP LEVELS IN GAAS EPILAYERS GROWN ON SI BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION .3. 0.78 AND 0.84 EV PHOTOLUMINESCENCE EMISSIONS 期刊论文
JOURNAL OF MATERIALS SCIENCE LETTERS, 1995, 卷号: 14, 期号: 14, 页码: 1004-1006
作者:  ZHAO, JL;  GAO, Y;  LIU, XY;  DOU, K;  HUANG, SH;  YU, JQ;  LIANG, JC;  GAO, HK
Adobe PDF(259Kb)  |  收藏  |  浏览/下载:138/0  |  提交时间:2018/06/13
STUDIES ON DEEP LEVELS IN GAAS EPILAYERS GROWN ON SI BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION .2. 1.13 EV PHOTOLUMINESCENCE EMISSION 期刊论文
JOURNAL OF MATERIALS SCIENCE LETTERS, 1994, 卷号: 13, 期号: 23, 页码: 1694-1696
作者:  ZHAO, JL;  GAO, Y;  LIU, XY;  SU, XA;  HUANG, SH;  YU, JQ;  LIANG, JC;  GAO, HK
Adobe PDF(259Kb)  |  收藏  |  浏览/下载:129/0  |  提交时间:2018/06/13