Cubic MgxZn1-xO films grown on Si(111)
其他题名Si(111)衬底上生长的立方Mg2Zn1-xO晶体薄膜
Qiu, DJ; Wu, HZ; Chen, NB; Tian, WJ
2003-11-01
发表期刊JOURNAL OF INORGANIC MATERIALS
卷号18期号:6页码:1385-1388
摘要Epitaxy of the cubic MgxZn1-xO thin films on Si (111) was achieved by the reactive electron beam evaporation for the first time. Energy dispersive x-ray detection (EDX) and x-ray diffraction (XRD) were employed to characterize the as-grown films. The orientation of cubic MgxZn1-xO films relies on the growth temperature and the highly (200) oriented MgxZn1-xO films are attainable, only at the optimal growth temperature of about 200degreesC. Photoluminescence excitation (PLE) spectroscopic measurement demonstrates that the optical absorption band edge of the cubic MgxZn1-xO is at 4.20eV, which is 3.50eV lower than the band gap of MgO. Furthermore, XRD measurements indicate the lattice mismatch between cubic MgxZn1-xO and MgO is only 0.16%. The successful growth of high quality MgxZn1-xO renders the fabrication of cubic phase MgxZn1-xO/MgO multiple quantum wells possible.
文章类型Article
关键词Reactive E-beam Evaporation Cubic Mgxzn1-xo Film
WOS标题词Science & Technology ; Technology
收录类别SCI
关键词[WOS]ZNO/ZNMGO MULTIQUANTUM WELLS ; ROOM-TEMPERATURE ; ZNO ; EFFICIENCY ; ALLOY
语种中文
WOS研究方向Materials Science
WOS类目Materials Science, Ceramics
WOS记录号WOS:000187912100041
引用统计
被引频次:1[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.opt.ac.cn/handle/181661/25458
专题中国科学院西安光学精密机械研究所(2010年前)
作者单位1.Zhejiang Univ, Dept Phys, Hangzhou 310028, Peoples R China
2.Chinese Acad Sci, Xian Inst Opt & Precis Mech, Xian 710068, Peoples R China
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GB/T 7714
Qiu, DJ,Wu, HZ,Chen, NB,et al. Cubic MgxZn1-xO films grown on Si(111)[J]. JOURNAL OF INORGANIC MATERIALS,2003,18(6):1385-1388.
APA Qiu, DJ,Wu, HZ,Chen, NB,&Tian, WJ.(2003).Cubic MgxZn1-xO films grown on Si(111).JOURNAL OF INORGANIC MATERIALS,18(6),1385-1388.
MLA Qiu, DJ,et al."Cubic MgxZn1-xO films grown on Si(111)".JOURNAL OF INORGANIC MATERIALS 18.6(2003):1385-1388.
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