High-quality GaN grown by gas-source MBE

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	High-quality GaN grown by gas-source MBE
	Wang, JX ; Sun, DZ ; Wang, XL ; Li, JM ; Zeng, YP ; Hou, X ; Lin, LY
	2001-07-01
发表期刊	JOURNAL OF CRYSTAL GROWTH
卷号	227 页码:386-389
摘要	High-quality GaN epilayers were consistently obtained using a home-made gas-sourer MBE system on sapphire substrates. Room-temperature electron mobility of the grown GaN film is 300 cm(2)/V s with a background electron concentration as low as 2 x 10(17) cm(-3) The full-width at half-maximum of the GaN (0 0 0 2) double-crystal X-ray rocking curve is 6 arcmin. At low temperature (3.5 K), the FWHM of the: near-band-edge photoluminescence emission line is 10 meV. Furthermore, using piezoelectric effect alone with the high-quality films, two-dimensional electron gas was formed in a GaN/AlN/GaN/sapphire structure. Its room-temperature and low-temperature (77 K) electron mobility is 680 cm(2)/V s and 1700 cm(2)/V s, and the corresponding sheet electron density is 3.2 x 10(13) and 2.6 x 10(13) cm(-2), respectively. (C) 2001 Published by Elsevier Science.
文章类型	Article
关键词	Characterization Molecular Beam Epitaxy Gallium Compounds Nitrides Piezoelectric Materials Semiconducting Gallium Compounds
WOS标题词	Science & Technology ; Physical Sciences ; Technology
收录类别	SCI ; EI ; ISTP
关键词[WOS]	MOLECULAR-BEAM EPITAXY ; HETEROSTRUCTURES ; SAPPHIRE ; DIODES
语种	英语
WOS研究方向	Crystallography ; Materials Science ; Physics
WOS类目	Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:000169557600076
引用统计	被引频次：4[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.opt.ac.cn/handle/181661/25427
专题	中国科学院西安光学精密机械研究所(2010年前)
作者单位	1.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Xian Inst Opt & Precis Mech, Xian 710068, Peoples R China
推荐引用方式 GB/T 7714	Wang, JX,Sun, DZ,Wang, XL,et al. High-quality GaN grown by gas-source MBE[J]. JOURNAL OF CRYSTAL GROWTH,2001,227:386-389.
APA	Wang, JX.,Sun, DZ.,Wang, XL.,Li, JM.,Zeng, YP.,...&Lin, LY.(2001).High-quality GaN grown by gas-source MBE.JOURNAL OF CRYSTAL GROWTH,227,386-389.
MLA	Wang, JX,et al."High-quality GaN grown by gas-source MBE".JOURNAL OF CRYSTAL GROWTH 227(2001):386-389.

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