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Study of GSMBE growth and characteristics of high-quality strained In0.63Ga0.37As/InP quantum wells 期刊论文
JOURNAL OF CRYSTAL GROWTH, 1997, 卷号: 180, 期号: 1, 页码: 22-26
Authors:  Wang, XL;  Sun, DZ;  Kong, MY;  Hou, X;  Zeng, YP
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Quantum Wells  Gsmbe  Ingaas/inp  Photoluminescence