中文版 | English

在结果中检索

OPT OpenIR

浏览/检索结果: 共9条，第1-9条 帮助

限定条件    
已选(0)清除 条数/页：   排序方式：
Research on the high indium content InGaAs multiple quantum wells wafers for lambda > 1.55 mu m laser diodes 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2015, 卷号: 631, 页码: 283-287
作者:  Lin, Tao;  Sun, Hang;  Zhang, Haoqing;  Wang, Yonggang;  Lin, Nan;  Ma, Xiaoyu
Adobe PDF(672Kb)  |  收藏  |  浏览/下载：182/1  |  提交时间：2015/07/15
Laser Diode  Mocvd  Gaas  Inp  
Growth of short-period InAs/GaSb superlattices for infrared sensing 期刊论文
JOURNAL OF INFRARED AND MILLIMETER WAVES, 2011, 卷号: 30, 期号: 6, 页码: 511-+
作者:  Wang Tao;  Yang Jin;  Yin Fei;  Wang Jing-Wei;  Hu Ya-Nan;  Zhang Li-Chen;  Yin Jing-Zhi
Adobe PDF(642Kb)  |  收藏  |  浏览/下载：183/4  |  提交时间：2015/09/28
Inas/gasb Superlattice  Band Gap  Metal Organic Chemical Vapor Deposition (Mocvd)  Atomic Force Microscope(Afm)  Pl Spectra  
InAs/GaSb type-II superlattice grown by MOCVD for long-wavelength infrared detection 期刊论文
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2011, 卷号: 5, 期号: 9, 页码: 1017-1020
作者:  Xin, Liwei;  Wang, Tao;  Yang, Jin;  Wang, Jingwei;  Yin, Fei;  Hu, Yanan;  Jiao, Guohua;  Zhang, Lichen;  Yin, Jingzhi;  Song, Zhenyu
Microsoft Word(386Kb)  |  收藏  |  浏览/下载：428/6  |  提交时间：2014/01/07
B1.inas/gasb  A3.superlattices  A3.source Flux Control  A3.mocvd  A1.pl Spectra  
InAs/GaSb superlattices grown by LP-MOCVD for similar to 10 mu m wavelength infrared range 期刊论文
INFRARED PHYSICS & TECHNOLOGY, 2011, 卷号: 54, 期号: 6, 页码: 478-481
作者:  ChangYuchun;  WangTao;  YinFei;  WangJingwei;  SongZhenyu;  WangYiding;  YinJingzhi;  Jingzhi Yin
Adobe PDF(700Kb)  |  收藏  |  浏览/下载：555/6  |  提交时间：2012/06/29
Inas/gasb Superlattices  Inassb Interface Layer  Growth Temperature  Lp-mocvd  
Growth and characterization of InAsSb alloys by metalorganic chemical vapour deposition 期刊论文
CHINESE PHYSICS B, 2009, 卷号: 18, 期号: 1, 页码: 320-323
作者:  Yan Jun-Feng;  Wang Tao;  Wang Jing-Wei;  Zhang Zhi-Yong;  Zhao Wu
Adobe PDF(2341Kb)  |  收藏  |  浏览/下载：338/1  |  提交时间：2010/01/12
Metalorganic Chemical Vapour Deposition (Mocvd)  Antimonides  Semiconducting Indium Compounds  
A new method to grow high quality GaN film by MOCVD 期刊论文
ACTA PHYSICA SINICA, 2006, 卷号: 55, 期号: 7, 页码: 3606-3610
作者:  Peng Dong-Sheng;  Feng Yu-Chun;  Wang Wen-Xin;  Liu Xiao-Feng;  Shi Wei;  Niu Han-Ben
Adobe PDF(375Kb)  |  收藏  |  浏览/下载：189/0  |  提交时间：2015/08/18
Surface Treated  Mocvd  Lateral Epitaxial Overgrown(Leo)  Gan Film  
Growth and characterization of GaxIn1-xAs1-ySby epitaxial layers grown by LP-MOCVD 期刊论文
Proc. SPIE, 2006, 期号: 6029, 页码: 602912-1~6029126
作者:  Jingwei Wang;  Yiding Wang;  Tao Wang;  Shuren Yang;  Xiaoting Li;  Jingzhi Yin;  Xiaofeng Sai;  SaiHongkai Gao
Adobe PDF(250Kb)  |  收藏  |  浏览/下载：451/5  |  提交时间：2010/01/14
Lp-mocvd  Mismatched  Gainassb  Surface Morphology  
Remote Epitaxy and Exfoliation of GaN via Graphene 期刊论文
ACS APPLIED ELECTRONIC MATERIALS
作者:  Han, Xu;  Yu, Jiadong;  Li, Zhenhao;  Wang, Xun;  Hao, Zhibiao;  Luo, Yi;  Sun, Changzheng;  Han, Yanjun;  Xiong, Bing;  Wang, Jian;  Li, Hongtao;  Zhang, Yuantao;  Duan, Bin;  Ning, Jing;  Wu, Haidi;  Wang, Lai
Adobe PDF(7247Kb)  |  收藏  |  浏览/下载：111/0  |  提交时间：2022/11/29
GaN  exfoliation  MOCVD  graphene  remote epitaxy  
Influence of Graphene Stability on III-Nitride Remote Epitaxy for Exfoliation 期刊论文
ACS APPLIED NANO MATERIALS
作者:  Han, Xu;  Yu, Jiadong;  Yang, Peilong;  Liu, Bo;  Wang, Xun;  Hao, Zhibiao;  Luo, Yi;  Sun, Changzheng;  Han, Yanjun;  Xiong, Bing;  Wang, Jian;  Li, Hongtao;  Wang, Lai
Adobe PDF(7964Kb)  |  收藏  |  浏览/下载：78/1  |  提交时间：2023/08/28
III-nitride  exfoliation  MOCVD  graphene  remote epitaxy