InAs/GaSb superlattices grown by LP-MOCVD for similar to 10 mu m wavelength infrared range

OPT OpenIR > 光电子学研究室

	InAs/GaSb superlattices grown by LP-MOCVD for similar to 10 mu m wavelength infrared range
	ChangYuchun; WangTao; YinFei; WangJingwei; SongZhenyu; WangYiding; YinJingzhi; Jingzhi Yin
作者部门	光电子学研究室
	2011
发表期刊	INFRARED PHYSICS & TECHNOLOGY
ISSN	1350-4495
卷号	54 期号:6 页码:478-481
产权排序	2
摘要	A type-II InAs/GaSb superlattice (SL) was grown on Te-doped (1 0 0) GaSb substrate by low pressure metal organic chemical vapor deposition (LP-MOCVD). The samples were obtained at different growth temperatures and with different interface layers. By introducing an InAsSb interface layer between InAs and GaSb, a good surface morphology of the superlattice was achieved when the sample growth temperature was around 500-520 degrees C. The photoluminescence (PL) peak wavelength of the sample was 10.7 mu m at 77 K, with FWHM of similar to 30 meV.
关键词	Inas/gasb Superlattices Inassb Interface Layer Growth Temperature Lp-mocvd
学科领域	Instruments & Instrumentation
URL	查看原文
收录类别	SCI ; EI
语种	英语
项目资助者	National Natural Science Foundation of China;National High Technology Research and Development Program ("863" Program) of China;Science and Technology Office, Jilin Province
文献类型	期刊论文
条目标识符	http://ir.opt.ac.cn/handle/181661/19940
专题	光电子学研究室
通讯作者	Jingzhi Yin
推荐引用方式 GB/T 7714	ChangYuchun,WangTao,YinFei,et al. InAs/GaSb superlattices grown by LP-MOCVD for similar to 10 mu m wavelength infrared range[J]. INFRARED PHYSICS & TECHNOLOGY,2011,54(6):478-481.
APA	ChangYuchun.,WangTao.,YinFei.,WangJingwei.,SongZhenyu.,...&Jingzhi Yin.(2011).InAs/GaSb superlattices grown by LP-MOCVD for similar to 10 mu m wavelength infrared range.INFRARED PHYSICS & TECHNOLOGY,54(6),478-481.
MLA	ChangYuchun,et al."InAs/GaSb superlattices grown by LP-MOCVD for similar to 10 mu m wavelength infrared range".INFRARED PHYSICS & TECHNOLOGY 54.6(2011):478-481.

条目包含的文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
InAsGaSb superlattic（700KB）			限制开放	--	请求全文