A new method to grow high quality GaN film by MOCVD

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	A new method to grow high quality GaN film by MOCVD
	Peng Dong-Sheng ; Feng Yu-Chun ; Wang Wen-Xin ; Liu Xiao-Feng ; Shi Wei ; Niu Han-Ben
	2006-07-01
发表期刊	ACTA PHYSICA SINICA
卷号	55 期号:7 页码:3606-3610
摘要	Patterned c-plane sapphire substrate is prepared by chemical etching. GaN films are grown by LP-MOCVD on surface treated sapphire substrate and common c-plane sapphire substrate. The structure and properties of the GaN films are analyzed by high-resolution double crystal X-ray diffraction (DCXRD), scanning electron microscope(SEM) and atomic force microscope (AFM) The results indicate that the quality of GaN film grown on sapphire substrate prepared by surface treatment is superior to that grown on common c-plane sapphire substrate. High-resolution double crystal X-ray diffraction shows that for the GaN grown on surface treated sapphire substrate, the (0002) and (10 (1) over bar2) reflections have full-width at half-maximum as low as 208.80arcsec and 320.76 acrsec, respectively. The shortcomings of procedure complexity and high crystallographic tilt in conventional lateral epitaxial overgrowth are overcome by using the new method.
文章类型	Article
关键词	Surface Treated Mocvd Lateral Epitaxial Overgrown(Leo) Gan Film
WOS标题词	Science & Technology ; Physical Sciences
收录类别	SCI ; EI
关键词[WOS]	SAPPHIRE
语种	英语
WOS研究方向	Physics
WOS类目	Physics, Multidisciplinary
WOS记录号	WOS:000239068500068
引用统计	被引频次：11[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.opt.ac.cn/handle/181661/25149
专题	研究生部
作者单位	1.Chinese Acad Sci, Xian INst Opt & Precis Mech, Xian 710068, Peoples R China 2.Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China 3.Shenzhen Univ, Inst Optoelect, Shenzhen 518060, Peoples R China
推荐引用方式 GB/T 7714	Peng Dong-Sheng,Feng Yu-Chun,Wang Wen-Xin,et al. A new method to grow high quality GaN film by MOCVD[J]. ACTA PHYSICA SINICA,2006,55(7):3606-3610.
APA	Peng Dong-Sheng,Feng Yu-Chun,Wang Wen-Xin,Liu Xiao-Feng,Shi Wei,&Niu Han-Ben.(2006).A new method to grow high quality GaN film by MOCVD.ACTA PHYSICA SINICA,55(7),3606-3610.
MLA	Peng Dong-Sheng,et al."A new method to grow high quality GaN film by MOCVD".ACTA PHYSICA SINICA 55.7(2006):3606-3610.

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