| InAs/GaSb type-II superlattice grown by MOCVD for long-wavelength infrared detection | |
Xin, Liwei1,3; Wang, Tao1 ; Yang, Jin1,3; Wang, Jingwei1; Yin, Fei1; Hu, Yanan1,3; Jiao, Guohua1; Zhang, Lichen1,3; Yin, Jingzhi2; Song, Zhenyu2
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| 作者部门 | 光电子学研究室 |
| 2011-09-01 | |
| 发表期刊 | OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS
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| ISSN | 1842-6573 |
| 卷号 | 5期号:9页码:1017-1020 |
| 产权排序 | 1 |
| 摘要 | Recently, many characteristics of the InAs/GaSb type-II superlattice(SL) have been investigated. However, little research work has been devoted to the source flux control, which is very important for improving the property of the SL. Based on the technology of metal organic chemical vapor deposition (MOCVD) on GaSb substrate, which has a better cost effectiveness for large-scale production, SL with excellent crystal quality is proposed in this paper. Furthermore, the importance of source flux control is analyzed by comparison of the low-temperature photoluminescence (PL) spectra of the SL grown with a special source flux control and that with a simple source flux control. The x-ray diffraction(XRD) data and the surface morphology obtained by atomic force microscopy(AFM) show that the SL designed by us has smooth surface, and the peak sense wavelength of the SL is around 10 mu m. |
| 文章类型 | Article |
| 关键词 | B1.inas/gasb A3.superlattices A3.source Flux Control A3.mocvd A1.pl Spectra |
| WOS标题词 | Science & Technology ; Technology ; Physical Sciences |
| 收录类别 | SCI |
| 关键词[WOS] | OPTICAL CHARACTERIZATION ; PHOTODIODES |
| 语种 | 英语 |
| WOS研究方向 | Materials Science ; Optics |
| WOS类目 | Materials Science, Multidisciplinary ; Optics |
| WOS记录号 | WOS:000297637400028 |
| 引用统计 | |
| 文献类型 | 期刊论文 |
| 条目标识符 | http://ir.opt.ac.cn/handle/181661/20958 |
| 专题 | 光电子学研究室 |
| 作者单位 | 1.Chinese Acad Sci, Xian Inst Opt & Precis Mech, State Key Lab Transient Opt & Technol, Xian 710119, Peoples R China 2.Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China 3.Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Xin, Liwei,Wang, Tao,Yang, Jin,et al. InAs/GaSb type-II superlattice grown by MOCVD for long-wavelength infrared detection[J]. OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS,2011,5(9):1017-1020. |
| APA | Xin, Liwei.,Wang, Tao.,Yang, Jin.,Wang, Jingwei.,Yin, Fei.,...&Song, Zhenyu.(2011).InAs/GaSb type-II superlattice grown by MOCVD for long-wavelength infrared detection.OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS,5(9),1017-1020. |
| MLA | Xin, Liwei,et al."InAs/GaSb type-II superlattice grown by MOCVD for long-wavelength infrared detection".OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS 5.9(2011):1017-1020. |
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| 文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
| InAsGaSb type-II sup（386KB） | 期刊论文 | 出版稿 | 限制开放 | CC BY-NC-SA | 请求全文 | |
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