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Sulfide treatment passivation of mid-/long-wave dual-color infrared detectors based on type-II InAs/GaSb superlattices 期刊论文
OPTICAL AND QUANTUM ELECTRONICS, 2019, 卷号: 51, 期号: 3
作者:  Guo, Chunyan;  Jiang, Zhi;  Jiang, Dongwei;  Wang, Guowei;  Xu, Yingqiang;  Wang, Tao;  Tian, Jinshou;  Wu, Zhaoxin;  Niu, Zhichuan
Adobe PDF(1709Kb)  |  收藏  |  浏览/下载：239/6  |  提交时间：2019/03/21
Dual-color infrared detectors  InAs  GaSb superlattices  Molecular beam epitaxy  Sulfide treatment passivation  
Visible-extended mid-infrared wide spectrum detector based on InAs/GaSb type-II superlattices (T2SL) 期刊论文
INFRARED PHYSICS & TECHNOLOGY, 2018, 卷号: 89, 页码: 147-153
作者:  Guo, Chunyan;  Sun, Yaoyao;  Jia, Zhe;  Jiang, Zhi;  Lv, Yuexi;  Hao, Hongyue;  Han, Xi;  Dong, Yinan;  Jiang, Dongwei;  Wang, Guowei;  Xu, Yingqiang;  Wang, Tao;  Tian, Jinshou;  Wu, Zhaoxin;  Niu, Zhichuan
Adobe PDF(2647Kb)  |  收藏  |  浏览/下载：185/7  |  提交时间：2018/12/12
Wide Spectrum Detector  Microstructure  Inas/gasb Type-ii Superlattice  Photon Traps  
Growth of short-period InAs/GaSb superlattices for infrared sensing 期刊论文
JOURNAL OF INFRARED AND MILLIMETER WAVES, 2011, 卷号: 30, 期号: 6, 页码: 511-+
作者:  Wang Tao;  Yang Jin;  Yin Fei;  Wang Jing-Wei;  Hu Ya-Nan;  Zhang Li-Chen;  Yin Jing-Zhi
Adobe PDF(642Kb)  |  收藏  |  浏览/下载：181/4  |  提交时间：2015/09/28
Inas/gasb Superlattice  Band Gap  Metal Organic Chemical Vapor Deposition (Mocvd)  Atomic Force Microscope(Afm)  Pl Spectra  
InAs/GaSb type-II superlattice grown by MOCVD for long-wavelength infrared detection 期刊论文
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2011, 卷号: 5, 期号: 9, 页码: 1017-1020
作者:  Xin, Liwei;  Wang, Tao;  Yang, Jin;  Wang, Jingwei;  Yin, Fei;  Hu, Yanan;  Jiao, Guohua;  Zhang, Lichen;  Yin, Jingzhi;  Song, Zhenyu
Microsoft Word(386Kb)  |  收藏  |  浏览/下载：427/6  |  提交时间：2014/01/07
B1.inas/gasb  A3.superlattices  A3.source Flux Control  A3.mocvd  A1.pl Spectra  
InAs/GaSb superlattices grown by LP-MOCVD for similar to 10 mu m wavelength infrared range 期刊论文
INFRARED PHYSICS & TECHNOLOGY, 2011, 卷号: 54, 期号: 6, 页码: 478-481
作者:  ChangYuchun;  WangTao;  YinFei;  WangJingwei;  SongZhenyu;  WangYiding;  YinJingzhi;  Jingzhi Yin
Adobe PDF(700Kb)  |  收藏  |  浏览/下载：553/6  |  提交时间：2012/06/29
Inas/gasb Superlattices  Inassb Interface Layer  Growth Temperature  Lp-mocvd