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Two-dimensional electron gas characteristics of InP-based high electron mobility transistor terahertz detector 期刊论文
CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 4
作者:  Li, Jin-Lun;  Cui, Shao-Hui;  Xu, Jian-Xing;  Cui, Xiao-Ran;  Guo, Chun-Yan;  Ma, Ben;  Ni, Hai-Qiao;  Niu, Zhi-Chuan;  Ni, HQ (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices, Beijing 100083, Peoples R China.
Adobe PDF(1077Kb)  |  收藏  |  浏览/下载：263/0  |  提交时间：2018/05/14
Thz Detector  High Electron Mobility Transistor  Two-dimensional Electron Gas  Inp  
Growth and characterization of InAsSb alloys by metalorganic chemical vapour deposition 期刊论文
CHINESE PHYSICS B, 2009, 卷号: 18, 期号: 1, 页码: 320-323
作者:  Yan Jun-Feng;  Wang Tao;  Wang Jing-Wei;  Zhang Zhi-Yong;  Zhao Wu
Adobe PDF(2341Kb)  |  收藏  |  浏览/下载：344/1  |  提交时间：2010/01/12
Metalorganic Chemical Vapour Deposition (Mocvd)  Antimonides  Semiconducting Indium Compounds