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Two-dimensional electron gas characteristics of InP-based high electron mobility transistor terahertz detector 期刊论文
CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 4
作者:  Li, Jin-Lun;  Cui, Shao-Hui;  Xu, Jian-Xing;  Cui, Xiao-Ran;  Guo, Chun-Yan;  Ma, Ben;  Ni, Hai-Qiao;  Niu, Zhi-Chuan;  Ni, HQ (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices, Beijing 100083, Peoples R China.
Adobe PDF(1077Kb)  |  收藏  |  浏览/下载：257/0  |  提交时间：2018/05/14
Thz Detector  High Electron Mobility Transistor  Two-dimensional Electron Gas  Inp  
SERS activity with tenfold detection limit optimization on a type of nanoporous AAO-based complex multilayer substrate 期刊论文
Nanoscale, 2016, 卷号: 8, 期号: 11, 页码: 5920-5927
作者:  Sui, Chaofan;  Wang, Kaige;  Wang, Shuang;  Ren, Junying;  Bai, Xiaohong;  Bai, Jintao;  Wang, Kaige (wangkg@nwu.edu.cn)
Adobe PDF(3530Kb)  |  收藏  |  浏览/下载：395/1  |  提交时间：2016/04/06