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Semiconductor device comprising a bonding structure including a silver-tin compound and a nickel-tin compound and method of manufacturing the same 专利
专利类型: 发明申请, 专利号: EP2993692A2, 申请日期: 2016-03-09, 公开日期: 2016-03-09
发明人:  CHU, KUNMO;  MOON, CHANGYOUL;  LEE, SUNGHEE;  HWANG, JUNSIK
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Lift-off process for GaN films formed on SiC substrates and devices fabricated using the method 专利
专利类型: 授权发明, 专利号: US7825006, 申请日期: 2010-11-02, 公开日期: 2010-11-02
发明人:  NAKAMURA, SHUJI;  DENBAARS, STEVEN
Adobe PDF(173Kb)  |  收藏  |  浏览/下载:45/0  |  提交时间:2019/12/24
Apparatus and method for stacking laser bars for uniform facet coating 专利
专利类型: 授权发明, 专利号: US7268005, 申请日期: 2007-09-11, 公开日期: 2007-09-11
发明人:  CHEN, JOHN;  LEI, CHUN;  SHIH, ROBERT
Adobe PDF(511Kb)  |  收藏  |  浏览/下载:58/0  |  提交时间:2019/12/24
Semiconductor materials and devices 专利
专利类型: 发明申请, 专利号: EP1815568A1, 申请日期: 2007-08-08, 公开日期: 2007-08-08
发明人:  WATSON, IAN, MICHAEL INSTITUTE OF PHOTONICS;  DAWSON, MARTIN INSTITUTE OF PHOTONICS;  GU, ERDAN INSTITUTE OF PHOTONICS;  MARTIN, ROBERT, WILLIAM DEPARTMENT OF PHYSICS;  EDWARDS, PAUL, ROGER DEPARTMENT OF PHYSICS
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Surface emitting semiconductor laser 专利
专利类型: 授权发明, 专利号: US7180926, 申请日期: 2007-02-20, 公开日期: 2007-02-20
发明人:  YOSHIKAWA, MASAHIRO
Adobe PDF(193Kb)  |  收藏  |  浏览/下载:54/0  |  提交时间:2020/01/13
Near-field light emitting device and data recording/reproduction apparatus 专利
专利类型: 发明申请, 专利号: EP1742312A2, 申请日期: 2007-01-10, 公开日期: 2007-01-10
发明人:  TAWA, FUMIHIRO C/O FUJITSU LIMITED
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Light emitting device package and method for manufacturing the same 专利
专利类型: 发明申请, 专利号: EP1724848A2, 申请日期: 2006-11-22, 公开日期: 2006-11-22
发明人:  KIM, GEUN HO;  LEE, SEUNG YEOB, 402, JEONGSEOK GREEN VILLA
Adobe PDF(1001Kb)  |  收藏  |  浏览/下载:80/0  |  提交时间:2019/12/30
Vertical structure semiconductor devices 专利
专利类型: 发明申请, 专利号: WO2005104780A2, 申请日期: 2005-11-10, 公开日期: 2005-11-10
发明人:  YOO, MYUNG CHEOL
Adobe PDF(1335Kb)  |  收藏  |  浏览/下载:106/0  |  提交时间:2019/12/31
Nitride semiconductor device comprising bonded substrate and fabrication method of the same 专利
专利类型: 发明申请, 专利号: EP1385215A2, 申请日期: 2004-01-28, 公开日期: 2004-01-28
发明人:  NAGAHAMA, SHINICHI;  SANO, MASAHIKO;  YANAMOTO, TOMOYA;  SAKAMOTO, KEIJI;  YAMAMOTO, MASASHI;  MORITA, DAISUKE
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Nitride semiconductor device comprising bonded substrate and fabrication method of the same 专利
专利类型: 发明申请, 专利号: EP1385215A2, 申请日期: 2004-01-28, 公开日期: 2004-01-28
发明人:  NAGAHAMA, SHINICHI;  SANO, MASAHIKO;  YANAMOTO, TOMOYA;  SAKAMOTO, KEIJI;  YAMAMOTO, MASASHI;  MORITA, DAISUKE
Adobe PDF(1090Kb)  |  收藏  |  浏览/下载:73/0  |  提交时间:2019/12/30