Semiconductor device comprising a bonding structure including a silver-tin compound and a nickel-tin compound and method of manufacturing the same

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	Semiconductor device comprising a bonding structure including a silver-tin compound and a nickel-tin compound and method of manufacturing the same
其他题名	Semiconductor device comprising a bonding structure including a silver-tin compound and a nickel-tin compound and method of manufacturing the same
	CHU, KUNMO; MOON, CHANGYOUL; LEE, SUNGHEE; HWANG, JUNSIK
	2016-03-09
专利权人	SAMSUNG ELECTRONICS CO., LTD
公开日期	2016-03-09
授权国家	欧洲专利局
专利类型	发明申请
摘要	The present disclosure provides semiconductor chips (SC10, SC11), semiconductor devices and methods of manufacturing the semiconductor devices. The semiconductor device includes a base substrate (S100) and a semiconductor chip (SC10, SC11) on the base substrate (S100), the semiconductor chip (SC10, SC11) including a first layer structure (L10) and a second layer structure (L20) opposite to the first layer structure (L10), at least one of the first and second layer structures (L10, L20) including a semiconductor device portion, and a bonding structure (B10, B11) between the first layer structure (L10) and the second layer structure (L20), the bonding structure (B10, B11) including a silver-tin compound (Ag3Sn) and a nickel-tin compound (Ni3Sn4 and optionally also Ni3Sn). The semiconductor portion may be a light-emitting device portion, wherein the first layer structure (L10) includes a silicon substrate and the second layer structure (L20) includes the light-emitting device portion, which includes a group III-V semiconductor, for example, a GaN-based semiconductor. The method of manufacturing a semiconductor device comprises forming a first metal layer on a first substrate structure, the first metal layer including a first nickel (Ni) layer and a first tin (Sn) layer; forming a second metal layer on a second substrate structure, the second metal layer including a second Ni layer and optionally a second Sn layer on the second Ni layer; forming a capping layer between the first and second metal layers, the capping layer including silver (Ag); and forming a bonding structure including bonding the first metal layer formed on the first substrate structure to the second metal layer formed on the second substrate structure, and forming an intermediate layer between the first metal layer and the second metal layer by a reaction between the first and second metal layers and the capping layer, the intermediate layer including intermetallic compounds (Ag3Sn, Ni3Sn4 and optionally Ni3Sn). The Ag3Sn that is formed by a reaction between Ag and Sn fills a void region which occurs due to a volume contraction of a bonding portion occurring during a reaction between Ni and Sn.
其他摘要	本公开提供了半导体芯片（SC10，SC11），半导体器件和制造半导体器件的方法。半导体器件包括基础衬底（S100）和在基础衬底（S100）上的半导体芯片（SC10，SC11），半导体芯片（SC10，SC11）包括第一层结构（L10）和第二层结构（L20））与第一层结构（L10）相对的第一和第二层结构（L10，L20）中的至少一个包括半导体器件部分，以及第一层结构（L10）和第一层结构（L10）之间的键合结构（B10，B11）。第二层结构（L20），包括银 - 锡化合物（Ag3Sn）和镍 - 锡化合物（Ni3Sn4以及任选的还有Ni3Sn）的键合结构（B10，B11）。半导体部分可以是发光器件部分，其中第一层结构（L10）包括硅衬底，第二层结构（L20）包括发光器件部分，包括III-V族半导体，例如GaN基半导体。制造半导体器件的方法包括在第一衬底结构上形成第一金属层，第一金属层包括第一镍（Ni）层和第一锡（Sn）层;在第二衬底结构上形成第二金属层，第二金属层包括第二Ni层和可选的第二Ni层上的第二Sn层;在第一和第二金属层之间形成覆盖层，覆盖层包括银（Ag）;形成包括将形成在第一基板结构上的第一金属层结合到形成在第二基板结构上的第二金属层的结合结构，以及通过第一基板结构之间的反应形成第一金属层和第二金属层之间的中间层的结合结构和第二金属层和覆盖层，中间层包括金属间化合物（Ag3Sn，Ni3Sn4和任选的Ni3Sn）。通过Ag和Sn之间的反应形成的Ag3Sn填充空隙区域，该空隙区域由于在Ni和Sn之间的反应期间发生的结合部分的体积收缩而发生。
主权项	A semiconductor device comprising: a base substrate; and a semiconductor chip on the base substrate, the semiconductor chip including, a first layer structure and a second layer structure opposite to the first layer structure, at least one of the first and second layer structures including a semiconductor device portion, and a bonding structure between the first layer structure and the second layer structure, the bonding structure including a silver-tin (Ag-Sn) compound and a nickel-tin (Ni-Sn) compound.
申请日期	2015-06-04
专利号	EP2993692A2
专利状态	失效
申请号	EP2015170728
公开（公告）号	EP2993692A2
IPC 分类号	H01L21/58 \| H01L23/14 \| H01L33/48 \| H01S5/022 \| H01L25/065 \| H01L21/98
专利代理人	-
代理机构	GREENE, SIMON KENNETH
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/54590
专题	半导体激光器专利数据库
作者单位	SAMSUNG ELECTRONICS CO., LTD
推荐引用方式 GB/T 7714	CHU, KUNMO,MOON, CHANGYOUL,LEE, SUNGHEE,et al. Semiconductor device comprising a bonding structure including a silver-tin compound and a nickel-tin compound and method of manufacturing the same. EP2993692A2[P]. 2016-03-09.

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