Semiconductor materials and devices

OPT OpenIR > 半导体激光器专利数据库

	Semiconductor materials and devices
其他题名	Semiconductor materials and devices
	WATSON, IAN, MICHAEL INSTITUTE OF PHOTONICS; DAWSON, MARTIN INSTITUTE OF PHOTONICS; GU, ERDAN INSTITUTE OF PHOTONICS; MARTIN, ROBERT, WILLIAM DEPARTMENT OF PHYSICS; EDWARDS, PAUL, ROGER DEPARTMENT OF PHYSICS
	2007-08-08
专利权人	UNIVERSITY OF STRATHCLYDE
公开日期	2007-08-08
授权国家	欧洲专利局
专利类型	发明申请
摘要	A method of growing semiconductor materials in the Indium, Aluminium, Gallium Nitride (InA1GaN) material system and to devices made therefrom, in particular optical devices in the ultraviolet to green region of the visible spectrum. Certain optical devices, for example Vertical Cavity Surface Emitting Lasers (VCSELs) require great precision in the thickness of certain semiconductor layers. One aspect of the present invention provides a gallium-rich group III nitride layer (200, 201) and an adjacent layer of A1xInyGa1-x-yN layer (202). The AlxInyGa1-x-yN layer (202) acts as a fabrication facilitation layer and is selected to provide a good lattice match and high refractive index contrast with the gallium-rich group III nitride layer (200, 201). The high refractive index contrast permits in-situ optical monitoring. The extra layer (202) can be used as an etch marker or etch stop layer in subsequent processing and may be used in a lift-off process.
其他摘要	一种在铟，铝，氮化镓（InAlGaN）材料系统中生长半导体材料的方法以及由其制成的器件，特别是在可见光谱的紫外到绿色区域中的光学器件。某些光学器件，例如垂直腔面发射激光器（VCSEL），需要在某些半导体层的厚度方面具有很高的精度。本发明的一个方面提供富含镓的III族氮化物层（200,201）和相邻的Al x In y Ga 1-xy层 N层（202）。 Al x In y Ga 1-xy N层（202）用作制造促进层并且被选择以提供良好的晶格匹配与富含镓的III族氮化物层（200,201）形成高折射率。高折射率对比度允许原位光学监测。额外层（202）可以在后续处理中用作蚀刻标记或蚀刻停止层，并且可以用于剥离工艺。
主权项	A semiconductor device fabricated from the AlInGaN material system, the device comprising at least a first gallium-rich group III nitride layer, at least a first AlχInyGa1-x-yN layer adjacent the first gallium-rich group III nitride layer, and a further layer in the AlInGaN system adjacent to the first AlxLIyGa1 -x-yN layer, wherein the values of x and y are such as to provide lattice-match to the first gallium-rich group III nitride layer so that the in plane strain is less than +/- 1%, and the first AlχInyGa1-x-yN layer is such as to provide a detectable refractive index contrast with the at least one further layer in the AlInGaN material system or the first gallium-rich group III nitride layer.
申请日期	2005-11-04
专利号	EP1815568A1
专利状态	失效
申请号	EP2005804381
公开（公告）号	EP1815568A1
IPC 分类号	H01S5/183 \| H01S5/343 \| H01L33/32 \| H01S5/04
专利代理人	-
代理机构	KINSLER, MAUREEN CATHERINE
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/63779
专题	半导体激光器专利数据库
作者单位	UNIVERSITY OF STRATHCLYDE
推荐引用方式 GB/T 7714	WATSON, IAN, MICHAEL INSTITUTE OF PHOTONICS,DAWSON, MARTIN INSTITUTE OF PHOTONICS,GU, ERDAN INSTITUTE OF PHOTONICS,et al. Semiconductor materials and devices. EP1815568A1[P]. 2007-08-08.