Nitride semiconductor device comprising bonded substrate and fabrication method of the same

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	Nitride semiconductor device comprising bonded substrate and fabrication method of the same
其他题名	Nitride semiconductor device comprising bonded substrate and fabrication method of the same
	NAGAHAMA, SHINICHI; SANO, MASAHIKO; YANAMOTO, TOMOYA; SAKAMOTO, KEIJI; YAMAMOTO, MASASHI; MORITA, DAISUKE
	2004-01-28
专利权人	NICHIA CORPORATION
公开日期	2004-01-28
授权国家	欧洲专利局
专利类型	发明申请
摘要	A substrate 1 for growing nitride semiconductor has a first and second face and has a thermal expansion coefficient that is larger than that of the nitride semiconductor. At least n-type nitride semiconductor layers 3 to 5, an active layer 6 and p-type nitride semiconductor layers 7 to 8 are laminated to form a stack of nitride semiconductor on the first face of the substrate A first bonding layer including more than one metal layer is formed on the p-type nitride semiconductor layer 8. A supporting substrate having a first and second face has a thermal expansion coefficient that is larger than that of the nitride semiconductor and is equal or smaller than that of the substrate 1 for growing nitride semiconductor. A second bonding layer including more than one metal layer is formed on the first face of the supporting substrate. The first bonding layer 9 and the second bonding layer 11 are faced with each other and, then, pressed with heat to bond together. After that, the substrate 1 for growing nitride semiconductor is removed from the stack of nitride semiconductor so that a nitride semiconductor device is provided.
其他摘要	用于生长氮化物半导体的衬底1具有第一和第二面，并且具有比氮化物半导体的热膨胀系数大的热膨胀系数。至少n型氮化物半导体层3至5，有源层6和p型氮化物半导体层7至8被层叠以在衬底1的第一面上形成氮化物半导体堆叠。第一粘合层包括更多在p型氮化物半导体层8上形成多于一个金属层。具有第一和第二面的支撑衬底的热膨胀系数大于氮化物半导体的热膨胀系数并且等于或小于衬底1的热膨胀系数。用于生长氮化物半导体在支撑基板的第一面上形成包括多于一个金属层的第二接合层。第一粘合层9和第二粘合层11彼此面对，然后通过加热压合以粘合在一起。之后，从氮化物半导体堆叠中去除用于生长氮化物半导体的衬底1，从而提供氮化物半导体器件。
主权项	The fabrication method of a nitride semiconductor device comprising: forming a stack of nitride semiconductor by growing at least one or more n-type nitride semiconductor layers, an active layer having a quantum well structure including at least a well layer of Al aIn bGa 1-a-bN, (0 ≤ a ≤ 1, 0 ≤ b ≤ 1, a + b ≤ 1) and a barrier layer of Al cIn dGa 1-c-dN, (0 ≤ c ≤ 1, 0 ≤ d ≤ 1, c + d ≤ 1), and one or more p-type nitride semiconductor layers on one main face of a substrate for growing nitride semiconductor that has two mutually opposed main faces and has a thermal expansion coefficient higher than those of said n-type and p-type nitride semiconductor layers; forming a first bonding layer including one or more metal layers on said p-type nitride semiconductor layers; forming a second bonding layer including one or more metal layers in one main face of a supporting substrate having two mutually opposed main faces and having a thermal expansion coefficient higher than those of said n-type and p-type nitride semiconductor layers and equal to or smaller than that of said substrate for growing nitride semiconductor; setting said first bonding layer and said second bonding layer face to face each other and pressing said stack of nitride semiconductor and said supporting substrate with heat to bond together; and removing said substrate for growing nitride semiconductor from said stack of the nitride semiconductor.
申请日期	2003-07-08
专利号	EP1385215A2
专利状态	授权
申请号	EP2003015373
公开（公告）号	EP1385215A2
IPC 分类号	H01L21/762 \| H01L33/00 \| H01L33/06 \| H01L33/12 \| H01L33/32 \| H01L33/42 \| H01L33/44 \| H01L33/48 \| H01L33/50 \| H01L33/62
专利代理人	-
代理机构	EISENFÜHR, SPEISER & PARTNER
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/53074
专题	半导体激光器专利数据库
作者单位	NICHIA CORPORATION
推荐引用方式 GB/T 7714	NAGAHAMA, SHINICHI,SANO, MASAHIKO,YANAMOTO, TOMOYA,et al. Nitride semiconductor device comprising bonded substrate and fabrication method of the same. EP1385215A2[P]. 2004-01-28.

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