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High Efficiency 1.9 kW Single Diode Laser Bar Epitaxially Stacked with a Tunnel Junction
Zhao, Yuliang1; Wang, Zhenfu2; Demir, Abdullah3; Yang, Guowen4; Ma, Shufang5; Xu, Bingshe6; Sun, Cheng7; Li, Bo8; Qiu, Bocang9
作者部门瞬态光学研究室
2021
发表期刊IEEE Photonics Journal
ISSN19430655
卷号13期号:3
产权排序1
摘要

We report on the development of a 940-nm diode laser bar based on epitaxially stacked active regions by employing a tunnel junction structure. The tunnel junction and the device parameters were systematically optimized to achieve high output and power conversion efficiency. A record quasi-continuous wave (QCW) peak power of 1.91 kW at 25 was demonstrated from a 1-cm wide bar with a 2-mm cavity length at 1 kA drive current (200 s pulse width and 10 Hz repetition rate). Below the onset of the thermal rollover, the slope efficiency was as high as 2.23 W/A. The maximum power conversion efficiency of 61.1% at 25 was measured at 300 A. Reducing the heatsink temperature to 15 led to a marginal increase in the peak power to 1.95 kW. CCBYNCND

关键词semiconductor laser diode laser bar high power power conversion efficiency tunnel junction
DOI10.1109/JPHOT.2021.3073732
收录类别SCI ; EI
语种英语
WOS记录号WOS:000703752600002
出版者Institute of Electrical and Electronics Engineers Inc.
EI入藏号20211710259064
引用统计
被引频次:19[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.opt.ac.cn/handle/181661/94706
专题瞬态光学研究室
作者单位1.State Key Laboratory of Transient Optics and Photonics, Xi'an Institute of Optics and Precision Mechanics, 53046 Xi'an, shannxi, China, (e-mail: zhaoyuliang2016@opt.cn);
2.State Key Laboratory of Transient Optics and Photonics, Xi'an Institute of Optics and Precision Mechanics, 53046 Xi'an, Shaanxi, China, (e-mail: wzf2718@opt.ac.cn);
3.UNAM - Institute of Materials Science and Nanotechnology, Bilkent Universitesi, 52948 Ankara, Ankara, Turkey, (e-mail: demirab@gmail.com);
4.State Key Laboratory of Transient Optics and Photonics, Xi'an Institute of Optics and Precision Mechanics, 53046 Xi'an, Shaanxi, China, (e-mail: yangguowen@opt.ac.cn);
5.Institute of Atomic and molecular Science, Shaanxi University of Science and Technology, 74618 Xi'an, Shaanxi, China, (e-mail: mashufang@sust.edu.cn);
6.Institute of Atomic and molecular Science, Shaanxi University of Science and Technology, 74618 Xi'an, Shaanxi, China, (e-mail: xubingshe@sust.edu.cn);
7.R&D Department, Lumcore Optoelectronics Tech. Co. Ltd, Xi'an, Shaanxi, China, (e-mail: Sunc@lumcore.com);
8.R&D Department, Lumcore Optoelectronics Tech. Co. Ltd., Xi'an, shannxi, China, (e-mail: lib@lumcore.com);
9.State Key Laboratory of Transient Optics and Photonics, Xi'an Institute of Optics and Precision Mechanics, 53046 Xi'an, Shaanxi, China, (e-mail: qiubocang@opt.ac.cn)
推荐引用方式
GB/T 7714
Zhao, Yuliang,Wang, Zhenfu,Demir, Abdullah,et al. High Efficiency 1.9 kW Single Diode Laser Bar Epitaxially Stacked with a Tunnel Junction[J]. IEEE Photonics Journal,2021,13(3).
APA Zhao, Yuliang.,Wang, Zhenfu.,Demir, Abdullah.,Yang, Guowen.,Ma, Shufang.,...&Qiu, Bocang.(2021).High Efficiency 1.9 kW Single Diode Laser Bar Epitaxially Stacked with a Tunnel Junction.IEEE Photonics Journal,13(3).
MLA Zhao, Yuliang,et al."High Efficiency 1.9 kW Single Diode Laser Bar Epitaxially Stacked with a Tunnel Junction".IEEE Photonics Journal 13.3(2021).
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