| High Efficiency 1.9 kW Single Diode Laser Bar Epitaxially Stacked with a Tunnel Junction | |
Zhao, Yuliang1; Wang, Zhenfu2 ; Demir, Abdullah3; Yang, Guowen4; Ma, Shufang5; Xu, Bingshe6; Sun, Cheng7; Li, Bo8; Qiu, Bocang9
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| 作者部门 | 瞬态光学研究室 |
| 2021 | |
| 发表期刊 | IEEE Photonics Journal
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| ISSN | 19430655 |
| 卷号 | 13期号:3 |
| 产权排序 | 1 |
| 摘要 | We report on the development of a 940-nm diode laser bar based on epitaxially stacked active regions by employing a tunnel junction structure. The tunnel junction and the device parameters were systematically optimized to achieve high output and power conversion efficiency. A record quasi-continuous wave (QCW) peak power of 1.91 kW at 25 was demonstrated from a 1-cm wide bar with a 2-mm cavity length at 1 kA drive current (200 s pulse width and 10 Hz repetition rate). Below the onset of the thermal rollover, the slope efficiency was as high as 2.23 W/A. The maximum power conversion efficiency of 61.1% at 25 was measured at 300 A. Reducing the heatsink temperature to 15 led to a marginal increase in the peak power to 1.95 kW. CCBYNCND |
| 关键词 | semiconductor laser diode laser bar high power power conversion efficiency tunnel junction |
| DOI | 10.1109/JPHOT.2021.3073732 |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000703752600002 |
| 出版者 | Institute of Electrical and Electronics Engineers Inc. |
| EI入藏号 | 20211710259064 |
| 引用统计 | |
| 文献类型 | 期刊论文 |
| 条目标识符 | http://ir.opt.ac.cn/handle/181661/94706 |
| 专题 | 瞬态光学研究室 |
| 作者单位 | 1.State Key Laboratory of Transient Optics and Photonics, Xi'an Institute of Optics and Precision Mechanics, 53046 Xi'an, shannxi, China, (e-mail: zhaoyuliang2016@opt.cn); 2.State Key Laboratory of Transient Optics and Photonics, Xi'an Institute of Optics and Precision Mechanics, 53046 Xi'an, Shaanxi, China, (e-mail: wzf2718@opt.ac.cn); 3.UNAM - Institute of Materials Science and Nanotechnology, Bilkent Universitesi, 52948 Ankara, Ankara, Turkey, (e-mail: demirab@gmail.com); 4.State Key Laboratory of Transient Optics and Photonics, Xi'an Institute of Optics and Precision Mechanics, 53046 Xi'an, Shaanxi, China, (e-mail: yangguowen@opt.ac.cn); 5.Institute of Atomic and molecular Science, Shaanxi University of Science and Technology, 74618 Xi'an, Shaanxi, China, (e-mail: mashufang@sust.edu.cn); 6.Institute of Atomic and molecular Science, Shaanxi University of Science and Technology, 74618 Xi'an, Shaanxi, China, (e-mail: xubingshe@sust.edu.cn); 7.R&D Department, Lumcore Optoelectronics Tech. Co. Ltd, Xi'an, Shaanxi, China, (e-mail: Sunc@lumcore.com); 8.R&D Department, Lumcore Optoelectronics Tech. Co. Ltd., Xi'an, shannxi, China, (e-mail: lib@lumcore.com); 9.State Key Laboratory of Transient Optics and Photonics, Xi'an Institute of Optics and Precision Mechanics, 53046 Xi'an, Shaanxi, China, (e-mail: qiubocang@opt.ac.cn) |
| 推荐引用方式 GB/T 7714 | Zhao, Yuliang,Wang, Zhenfu,Demir, Abdullah,et al. High Efficiency 1.9 kW Single Diode Laser Bar Epitaxially Stacked with a Tunnel Junction[J]. IEEE Photonics Journal,2021,13(3). |
| APA | Zhao, Yuliang.,Wang, Zhenfu.,Demir, Abdullah.,Yang, Guowen.,Ma, Shufang.,...&Qiu, Bocang.(2021).High Efficiency 1.9 kW Single Diode Laser Bar Epitaxially Stacked with a Tunnel Junction.IEEE Photonics Journal,13(3). |
| MLA | Zhao, Yuliang,et al."High Efficiency 1.9 kW Single Diode Laser Bar Epitaxially Stacked with a Tunnel Junction".IEEE Photonics Journal 13.3(2021). |
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| High Efficiency 1.9 （1296KB） | 期刊论文 | 出版稿 | 限制开放 | CC BY-NC-SA | 请求全文 | |
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