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Current blocking structure to improve semiconductor laser performance
其他题名Current blocking structure to improve semiconductor laser performance
CHAN, YUEN CHUEN; ONG, TEIK KOOI; LAM, YEE LOY
2003-05-08
专利权人DENSELIGHT SEMICONDUCTOR PTE LTD.
公开日期2003-05-08
授权国家美国
专利类型发明申请
摘要The layer structure of a DC-PBH laser diode consists of an n-InP substrate (51), an n-InP buffer layer (52), an undoped-InGaAsP active layer (53), a p-Inp cladding layer (54), a p-InP current blocking layer (55), an n-InP current blocking layer (56), a p-InP cladding layer (57), and a p-InGaAsP contact layer (58). An additional layer of Fe-doped InP layer (55a) creates an acceptor level (Fe3+/Fe2+) near mid-band gap. The iron impurities are deep level traps, and will make the capacitance C2 less dependent of the impurity concentration of layer (56) which is normally doped with a concentration larger than 1x1018 cm-3 to lower the leakage current from p-InP blocking layer (57) to p-InP blocking layer (55) that does not contribute to light emission. The capacitance C2 and hence the overall capacitance Cp-n-p-n will be reduced with this Fe doped InP layer (55a) and consequently the displacement current through the current blocking structure during high speed operation will be lowered. In addition, as this Fe-doped InP layer is also a thermally stable semi-insulating material, a high resistivity layer is thus formed between the n-InP blocking layer (56) and P-InP blocking layer (55). Thus, this Fe doped InP layer (55a) will also effectively reduce the leakage current flowing through the p-n-p-n current blocking channel as mentioned above.
其他摘要DC-PBH激光二极管的层结构包括n-InP衬底(51),n-InP缓冲层(52),未掺杂的InGaAsP有源层(53),p-Inp包层(54),p-InP电流阻挡层(55),n-InP电流阻挡层(56),p-InP包覆层(57)和p-InGaAsP接触层(58)。附加的Fe掺杂InP层(55a)在中带隙附近产生受主能级(Fe3 + / Fe2 +)。铁杂质是深能级陷阱,并且将使电容C2更少地依赖于层(56)的杂质浓度,层(56)通常掺杂浓度大于1×1018cm-3以降低来自p-InP阻挡层的漏电流(57)对无光发射有贡献的p-InP阻挡层(55)。利用该Fe掺杂的InP层(55a)将减小电容C2并因此减小总电容Cp-n-p-n,因此在高速操作期间通过电流阻挡结构的位移电流将降低。另外,由于该Fe掺杂的InP层也是热稳定的半绝缘材料,因此在n-InP阻挡层(56)和P-InP阻挡层(55)之间形成高电阻率层。因此,如上所述,该Fe掺杂的InP层(55a)还将有效地减小流过p-n-p-n电流阻挡沟道的漏电流。
申请日期2002-11-06
专利号US20030086462A1
专利状态失效
申请号US10/288707
公开(公告)号US20030086462A1
IPC 分类号H01S5/062 | H01S5/22 | H01S5/227 | H01S5/00
专利代理人-
代理机构-
文献类型专利
条目标识符http://ir.opt.ac.cn/handle/181661/87152
专题半导体激光器专利数据库
作者单位DENSELIGHT SEMICONDUCTOR PTE LTD.
推荐引用方式
GB/T 7714
CHAN, YUEN CHUEN,ONG, TEIK KOOI,LAM, YEE LOY. Current blocking structure to improve semiconductor laser performance. US20030086462A1[P]. 2003-05-08.
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