Externally-Strain-Engineered Semiconductor Photonic and Electronic Devices and Assemblies and Methods of Making Same

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	Externally-Strain-Engineered Semiconductor Photonic and Electronic Devices and Assemblies and Methods of Making Same
其他题名	Externally-Strain-Engineered Semiconductor Photonic and Electronic Devices and Assemblies and Methods of Making Same
	RYOU, JAE-HYUN; SHERVIN, SHAHAB; KIM, SEUNG HWAN
	2019-02-07
专利权人	UNIVERSITY OF HOUSTON SYSTEM
公开日期	2019-02-07
授权国家	美国
专利类型	发明申请
摘要	Externally-strained devices such as LED and FET structures as discussed herein may have strain applied before or during their being coupled to a housing or packaging substrate. The packaging substrate may also be strained prior to receiving the structure. The strain on the devices enables modulation of light intensity, color, and electrical currents in some embodiments, and in alternate embodiments, enables a fixed strain to be induced and maintained in the structures.
其他摘要	诸如本文所讨论的LED和FET结构的外部应变器件可能在它们耦合到壳体或封装衬底之前或期间施加应变。在接收结构之前，封装衬底也可以是应变的。在一些实施例中，器件上的应变使得能够调制光强度，颜色和电流，并且在替代实施例中，能够在结构中诱导和维持固定应变。
主权项	A method of modulating electrical current, the method comprising: disposing a first layer in contact with a second layer to form a layered structure; forming a channel at the interface of the first layer and the second layer; disposing at least a first electrode and a second electrode in contact with the first layer to form a transistor; inducing strain in the transistor, wherein inducing the strain comprises applying strain to the transistor in at least one strain cycle, and wherein the transistor retains a predetermined amount of strain subsequent to the at least one strain cycle; disposing the transistor in a housing in a manner such that the transistor retains the predetermined amount of strain subsequent to disposal in the housing; and subsequent to disposing the transistor in the housing, changing an amount of strain on the channel, wherein an electrical current in the transistor is modulated by changing the amount of the strain on the channel.
申请日期	2018-09-29
专利号	US20190044307A1
专利状态	申请中
申请号	US16/147616
公开（公告）号	US20190044307A1
IPC 分类号	H01S5/32 \| H01S5/34 \| H01L21/8238 \| H01S5/323 \| H01L29/06 \| H01L29/49 \| H01L29/84 \| H01L29/78 \| H01L29/778 \| H01L29/10 \| H01L29/20 \| H01L29/22 \| H01L33/02 \| H01L33/48
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/54922
专题	半导体激光器专利数据库
作者单位	UNIVERSITY OF HOUSTON SYSTEM
推荐引用方式 GB/T 7714	RYOU, JAE-HYUN,SHERVIN, SHAHAB,KIM, SEUNG HWAN. Externally-Strain-Engineered Semiconductor Photonic and Electronic Devices and Assemblies and Methods of Making Same. US20190044307A1[P]. 2019-02-07.