Gallium nitride-based semiconductor optical device, method of fabricating gallium nitride-based semiconductor optical device, and epitaxial wafer

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	Gallium nitride-based semiconductor optical device, method of fabricating gallium nitride-based semiconductor optical device, and epitaxial wafer
其他题名	Gallium nitride-based semiconductor optical device, method of fabricating gallium nitride-based semiconductor optical device, and epitaxial wafer
	ENYA, YOHEI; YOSHIZUMI, YUSUKE; OSADA, HIDEKI; ISHIBASHI, KEIJI; AKITA, KATSUSHI; UENO, MASAKI
	2012-07-24
专利权人	SUMITOMO ELECTRIC INDUSTRIES, LTD.
公开日期	2012-07-24
授权国家	美国
专利类型	授权发明
摘要	A gallium nitride-based semiconductor optical device is provided that includes an indium-containing gallium nitride-based semiconductor layer that exhibit low piezoelectric effect and high crystal quality. The gallium nitride-based semiconductor optical device 11a includes a GaN support base 13, a GaN-based semiconductor region 15, and well layers 19. A primary surface 13a tilts from a surface orthogonal to a reference axis that extends in a direction from one crystal axis of the m-axis and the a-axis of GaN toward the other crystal axis. The tilt angle AOFF is 0.05 degree or more to less than 15 degrees. The angle AOFF is equal to the angle defined by a vector VM and a vector VN. The inclination of the primary surface is shown by a typical m-plane SM and m-axis vector VM. The GaN-based semiconductor region 15 is provided on the primary surface 13a. In the well layers19 in an active layer 17, both the m-plane and the a-plane of the well layers 19 tilt from a normal axis AN of the primary surface 13a. The indium content of the well layers 19 is 0.1 or more.
其他摘要	提供一种氮化镓基半导体光学器件，其包括具有低压电效应和高晶体质量的含铟氮化镓基半导体层。氮化镓基半导体光学器件11a包括GaN支撑基底13，GaN基半导体区域15和阱层19.主表面13a从与参考轴垂直的表面倾斜，该参考轴在一个晶体的方向上延伸m轴的轴和GaN的a轴朝向另一个晶轴。倾斜角AOFF为0.05度以上且小于15度。角度AOFF等于矢量VM和矢量VN定义的角度。主表面的倾斜度由典型的m平面SM和m轴向量VM表示。 GaN基半导体区域15设置在主表面13a上。在有源层17中的阱层19中，阱层19的m面和a面均从主表面13a的法线轴AN倾斜。阱层19的铟含量为0.1或更大。
主权项	A gallium nitride-based semiconductor optical device, comprising: a support base comprising a first gallium nitride-based semiconductor, a reference axis extending in a direction of one of an m-axis and an a-axis of the first gallium nitride-based semiconductor, a reference plane being orthogonal to the reference axis, the support base having a primary surface, the primary surface tilting with reference to the reference plane toward the other of the m-axis and the a-axis of the first gallium nitride-based semiconductor by a tilt angle in a range of 0.05 degree or more to less than 15 degrees; a first conductive type gallium nitride-based semiconductor region provided on the primary surface; a semiconductor epitaxial layer provided for an active layer on the first conductive type gallium nitride-based semiconductor region, the semiconductor epitaxial layer comprising a second gallium nitride-based semiconductor, the second gallium nitride-based semiconductor including indium as a constituent element, an indium content of the semiconductor epitaxial layer being more than 0.1, an m-plane and an a-plane of the second gallium nitride-based semiconductor tilting with reference to a normal axis, and the normal axis extending in a direction of a normal line of the primary surface.
申请日期	2010-03-02
专利号	US8228963
专利状态	失效
申请号	US12/715860
公开（公告）号	US8228963
IPC 分类号	H01S5/00
专利代理人	-
代理机构	VENABLE LLP SARTORI, MICHAEL A.
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/45877
专题	半导体激光器专利数据库
作者单位	SUMITOMO ELECTRIC INDUSTRIES, LTD.
推荐引用方式 GB/T 7714	ENYA, YOHEI,YOSHIZUMI, YUSUKE,OSADA, HIDEKI,et al. Gallium nitride-based semiconductor optical device, method of fabricating gallium nitride-based semiconductor optical device, and epitaxial wafer. US8228963[P]. 2012-07-24.

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