Xi'an Institute of Optics and Precision Mechanics,CAS
| Analysis of InGaAs/InP Single Photon Avalanche Diodes With Multiplication Width in Sub-Micron | |
Qiao, Kai1,2,3; Chang, Yu1; Xu, Zefang1,3; Yin, Fei1 ; Liu, Liyu1,3; Wang, Jieying1; Su, Chang1,3; Xu, Linmeng1,3; Fang, Mengyan1,3; Liu, Chunliang2; Tian, Jinshou1; Wang, Xing1
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| 作者部门 | 条纹相机工程中心 |
| 2024-08-01 | |
| 发表期刊 | IEEE Journal of Quantum Electronics
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| ISSN | 00189197;15581713 |
| 卷号 | 60期号:4页码:1-7 |
| 产权排序 | 1 |
| 摘要 | InGaAs/InP single-photon avalanche photodiodes (SPADs) is capable of detecting single-photon in the near-infrared spectrum for applications such as quantum communication, fluorescence lifetime imaging, and Light detection and ranging(LIDAR). The effect of multiplication layer width on the performance of SPADs in both linear and Geiger mode have been theoretically studied. Three-types of InGaAs/InP planer SPADs with different multiplication width are fabricated and evaluated. The results of this study suggest that modifying the width of the multiplication layer can regulate the breakdown voltage, punch-through voltage, and dark current of the device. It is found that the measured time jitter is decreasing with the reduction of the width of the multiplication region. These characteristics can be used to optimize the temporal resolution of SPADs device. © 1965-2012 IEEE. |
| 关键词 | InGaAs/InP single-photon avalanche photodiodes (SPADs) time jitter multiplication |
| DOI | 10.1109/JQE.2024.3399176 |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:001240017200001 |
| 出版者 | Institute of Electrical and Electronics Engineers Inc. |
| EI入藏号 | 20242016094811 |
| 引用统计 | |
| 文献类型 | 期刊论文 |
| 条目标识符 | http://ir.opt.ac.cn/handle/181661/97487 |
| 专题 | 条纹相机工程中心 |
| 作者单位 | 1.Xi'an Institute of Optics and Precision Mechanics (XIOPM), Chinese Academy of Sciences (CAS), Key Laboratory of Ultra-Fast Photoelectric Diagnostics Technology, Shaanxi, Xi'an; 710119, China; 2.Xi'an Jiaotong University, Key Laboratory for Physical Electronics and Devices of the Ministry of Education, School of Electronic Science and Engineering, Xi'an; 710049, China; 3.University of Chinese Academy of Sciences, Center of Materials Science and Optoelectronics Engineering, Beijing; 100049, China |
| 推荐引用方式 GB/T 7714 | Qiao, Kai,Chang, Yu,Xu, Zefang,et al. Analysis of InGaAs/InP Single Photon Avalanche Diodes With Multiplication Width in Sub-Micron[J]. IEEE Journal of Quantum Electronics,2024,60(4):1-7. |
| APA | Qiao, Kai.,Chang, Yu.,Xu, Zefang.,Yin, Fei.,Liu, Liyu.,...&Wang, Xing.(2024).Analysis of InGaAs/InP Single Photon Avalanche Diodes With Multiplication Width in Sub-Micron.IEEE Journal of Quantum Electronics,60(4),1-7. |
| MLA | Qiao, Kai,et al."Analysis of InGaAs/InP Single Photon Avalanche Diodes With Multiplication Width in Sub-Micron".IEEE Journal of Quantum Electronics 60.4(2024):1-7. |
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| Analysis of InGaAs I（9605KB） | 期刊论文 | 出版稿 | 开放获取 | CC BY-NC-SA | 浏览 请求全文 | |
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