Xi'an Institute of Optics and Precision Mechanics,CAS
| Theoretical and experimental study on Noise Equivalent Power of X-ray semiconductor ultra-fast response material based on the rad-optic effect | |
Yan, Xin1,2 ; Wang, Tao2; Wang, Gang2; Yao, Dong1,2; Liu, Yiheng2; Gao, Guilong2; Xin, Liwei1,2; Yin, Fei2; Tian, Jinshou2; Chang, Xinlong1; He, Kai2
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| 作者部门 | 条纹相机工程中心 |
| 2022-06-22 | |
| 出处 | arXiv |
| ISSN | 23318422 |
| 产权排序 | 2 |
| 摘要 | Semiconductor material based on the rad-optic effect enables ultra-fast detection of X-rays and plays an important role in fusion diagnostics. Obtaining the accurate noise equivalent power (NEP) of the semiconductor ultrafast response material is the key to detecting X-rays. In this paper, the refractive index change mechanism of the semiconductor under X-ray irradiation was analyzed, and the quantitative relationship between the diffraction efficiency and the X-ray photon energy was established through the LT-AlGaAs diffraction imaging experiments. The impulse responses of LT-AlGaAs under 1 KeV-10 KeV X-ray radiation were calculated, revealing the variation of NEP density with radiated photon energy. In the case of bombarding the Al target to generate 1.5 KeV X-rays, the imaging experiments of LT-AlGaAs were performed. The diffraction image of LT-AlGaAs has a linear relationship with the radiation intensity, and the NEP density of LT-AlGaAs reaches 4.80×105W/cm2. This study has reference significance for the development of ultra-fast X-ray imaging systems based on the rad-optic effect. © 2022, CC BY. |
| 收录类别 | EI |
| 语种 | 英语 |
| 出版者 | arXiv |
| EI入藏号 | 20220214035 |
| 文献类型 | 预印本 |
| 条目标识符 | http://ir.opt.ac.cn/handle/181661/96056 |
| 专题 | 条纹相机工程中心 |
| 作者单位 | 1.Rocket Force University of Engineering, Xi'An; 710025, China; 2.Key Laboratory of Ultra-fast Photoelectric Diagnostics Technology, Xi'An Institute of Optics and Precision Mechanics (XIOPM), Chinese Academy of Sciences (CAS), Shaanxi, Xi'An; 710119, China |
| 推荐引用方式 GB/T 7714 | Yan, Xin,Wang, Tao,Wang, Gang,et al. Theoretical and experimental study on Noise Equivalent Power of X-ray semiconductor ultra-fast response material based on the rad-optic effect. 2022. |
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| Theoretical and expe（1169KB） | 预印本 | 开放获取 | CC BY-NC-SA | 浏览 请求全文 | ||
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