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Improving performance of semipolar (202¯1) light emitting diodes through reduction of threading dislocations by AlGaN/GaN superlattice interlayer
Song, Jie1,2; Choi, Joowon2; Han, Jung2
作者部门瞬态光学研究室
2020-04-15
发表期刊Journal of Crystal Growth
ISSN220248
卷号536
产权排序1
摘要

We report reducing the density of threading dislocations (TDs) in stacking-fault-free semipolar (202¯1) GaN grown on sapphire by inserting an AlGaN/GaN superlattice (SL). We have studied the influence of AlGaN/GaN SL on the reduction of TDs and found that the density of TDs decreases by more than a factor of three with increasing the number of AlGaN/GaN SL pairs up to 10. Furthermore, blue light emitting diodes (LEDs) have been grown on semipolar (202¯1) GaN/sapphire templates with inserted 10 pairs of AlGaN/GaN SL showing doubled light output power in comparison with the LEDs grown without AlGaN/GaN SL. © 2020 Elsevier B.V.

关键词Gallium nitride Dislocations Metalorganic chemical vapor deposition Superlattice Light emitting diodes
DOI10.1016/j.jcrysgro.2020.125575
收录类别SCI ; EI
语种英语
WOS记录号WOS:000520838100010
出版者Elsevier B.V.
EI入藏号20200908236603
引用统计
被引频次:3[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.opt.ac.cn/handle/181661/93279
专题瞬态光学研究室
通讯作者Song, Jie
作者单位1.State Key Laboratory of Transient Optics and Photonics, Xi'an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi'an; 710119, China;
2.Department of Electrical Engineering, Yale University, New Haven; CT; 06520, United States
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Song, Jie,Choi, Joowon,Han, Jung. Improving performance of semipolar (202¯1) light emitting diodes through reduction of threading dislocations by AlGaN/GaN superlattice interlayer[J]. Journal of Crystal Growth,2020,536.
APA Song, Jie,Choi, Joowon,&Han, Jung.(2020).Improving performance of semipolar (202¯1) light emitting diodes through reduction of threading dislocations by AlGaN/GaN superlattice interlayer.Journal of Crystal Growth,536.
MLA Song, Jie,et al."Improving performance of semipolar (202¯1) light emitting diodes through reduction of threading dislocations by AlGaN/GaN superlattice interlayer".Journal of Crystal Growth 536(2020).
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