Improving performance of semipolar (202¯1) light emitting diodes through reduction of threading dislocations by AlGaN/GaN superlattice interlayer | |
Song, Jie1,2; Choi, Joowon2; Han, Jung2 | |
作者部门 | 瞬态光学研究室 |
2020-04-15 | |
发表期刊 | Journal of Crystal Growth
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ISSN | 220248 |
卷号 | 536 |
产权排序 | 1 |
摘要 | We report reducing the density of threading dislocations (TDs) in stacking-fault-free semipolar (202¯1) GaN grown on sapphire by inserting an AlGaN/GaN superlattice (SL). We have studied the influence of AlGaN/GaN SL on the reduction of TDs and found that the density of TDs decreases by more than a factor of three with increasing the number of AlGaN/GaN SL pairs up to 10. Furthermore, blue light emitting diodes (LEDs) have been grown on semipolar (202¯1) GaN/sapphire templates with inserted 10 pairs of AlGaN/GaN SL showing doubled light output power in comparison with the LEDs grown without AlGaN/GaN SL. © 2020 Elsevier B.V. |
关键词 | Gallium nitride Dislocations Metalorganic chemical vapor deposition Superlattice Light emitting diodes |
DOI | 10.1016/j.jcrysgro.2020.125575 |
收录类别 | SCI ; EI |
语种 | 英语 |
WOS记录号 | WOS:000520838100010 |
出版者 | Elsevier B.V. |
EI入藏号 | 20200908236603 |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/93279 |
专题 | 瞬态光学研究室 |
通讯作者 | Song, Jie |
作者单位 | 1.State Key Laboratory of Transient Optics and Photonics, Xi'an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi'an; 710119, China; 2.Department of Electrical Engineering, Yale University, New Haven; CT; 06520, United States |
推荐引用方式 GB/T 7714 | Song, Jie,Choi, Joowon,Han, Jung. Improving performance of semipolar (202¯1) light emitting diodes through reduction of threading dislocations by AlGaN/GaN superlattice interlayer[J]. Journal of Crystal Growth,2020,536. |
APA | Song, Jie,Choi, Joowon,&Han, Jung.(2020).Improving performance of semipolar (202¯1) light emitting diodes through reduction of threading dislocations by AlGaN/GaN superlattice interlayer.Journal of Crystal Growth,536. |
MLA | Song, Jie,et al."Improving performance of semipolar (202¯1) light emitting diodes through reduction of threading dislocations by AlGaN/GaN superlattice interlayer".Journal of Crystal Growth 536(2020). |
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Improving performanc(1065KB) | 期刊论文 | 出版稿 | 限制开放 | CC BY-NC-SA | 请求全文 |
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