Method of epitaxially growing in liquid phase

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	Method of epitaxially growing in liquid phase
其他题名	Method of epitaxially growing in liquid phase
	URAGAKI TAMOTSU; INOUE MORIO; FURUIKE SUSUMU; IWASA HITOO
	1980-07-23
专利权人	MATSUSHITA ELECTRIC IND CO LTD
公开日期	1980-07-23
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To continuously form a second epitaxial layer on a semiconductor substrate by contacting the substrate with a solution containing a conductivity determining impurity to form a conductivity type epitaxial layer on the substrate, then performing vacuum extraction to evaporate the impurity in the solution to thus lower the concentration of the impurity in the solution. CONSTITUTION:Solute and conductivity determining impurity are added to a solvent as a solution in a solution tank. A semiconductor substrate is contacted with the solution to form a first conductivity epitaxial layer on the substrate. Then, the tank is evacuated into vacuum to partially evaporate the impurity in the solution to thereby lower the concentration of the impurity in the solution. The substrate formed with the first conductivity epitaxial layer is contacted with the solution thus lowered with the concentration of the impurity to further grow a second conductivity epitaxial layer on the first epitiaxial layer. Thus, the concentration of the impurity is controlled independently with one solution tank, thereby continuously forming the first and second conductivity epitaxial layers on the substrate.
其他摘要	目的：通过使衬底与含有导电性确定杂质的溶液接触以在衬底上形成导电型外延层，在半导体衬底上连续形成第二外延层，然后进行真空提取以蒸发溶液中的杂质，从而降低溶液中杂质的浓度。构成：作为溶液槽中的溶液，将溶质和电导率测定杂质添加到溶剂中。使半导体衬底与溶液接触以在衬底上形成第一导电外延层。然后，将容器抽真空至部分蒸发溶液中的杂质，从而降低溶液中杂质的浓度。形成有第一导电外延层的衬底与随着杂质浓度而降低的溶液接触，以进一步在第一外延层上生长第二导电外延层。因此，用一个溶液槽独立控制杂质的浓度，由此在衬底上连续形成第一和第二导电外延层。
申请日期	1979-01-17
专利号	JP1980096629A
专利状态	失效
申请号	JP1979004381
公开（公告）号	JP1980096629A
IPC 分类号	C30B19/00 \| C30B19/04 \| C30B19/06 \| C30B29/40 \| H01L21/208 \| H01L33/30 \| H01S5/00 \| C30B19/10 \| H01L33/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/89894
专题	半导体激光器专利数据库
作者单位	MATSUSHITA ELECTRIC IND CO LTD
推荐引用方式 GB/T 7714	URAGAKI TAMOTSU,INOUE MORIO,FURUIKE SUSUMU,et al. Method of epitaxially growing in liquid phase. JP1980096629A[P]. 1980-07-23.

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