Xi'an Institute of Optics and Precision Mechanics,CAS
Semiconductor laser | |
其他题名 | Semiconductor laser |
KOBAYASHI NAOKI; HORIKOSHI YOSHIHARU | |
1980-06-28 | |
专利权人 | NIPPON TELEGRAPH & TELEPHONE |
公开日期 | 1980-06-28 |
授权国家 | 日本 |
专利类型 | 发明申请 |
摘要 | PURPOSE:To obtain a flat active layer in which traps, which become non-light- emitting re-bonding centers, are small, by arranging on an In substrate an InP clad layer, and an active layer, a buffer layer and a clad layer, each consisting of specified proportions of In, Ga, As and P. CONSTITUTION:n-Type InP clad layer 42, InxGa1-xAsyP1-y active layer 43, p-type Inx'Ga1-x'Asy'P1-y' buffer layer 44, p-type Inx''Ga1-x''Asy''P1-y clad layer 45 are formed on n-type InP substrate 41; where 0y'>y''>0. As a result, four-element buffer layer 44, whose composition is close to that of active layer 44 and whose band gas is slightly larger, has been formed on acitve layer 43. By this, the meltback of the active layer is suppressed and the active boundary surface is made extremely flat. Further, traps, which become non-light-emitting re-bonding centers, on the boundary surface are reduced, and oscillation can be done at wavelengths 4-7mum at room temperature. |
其他摘要 | 目的:为了获得平坦的有源层,其中成为非发光再结合中心的陷阱很小,通过在In衬底上设置InP覆盖层以及有源层,缓冲层和包层,每个由特定比例的In,Ga,As和P.构成:n型InP覆盖层42,InxGa1-xAsyP1-y有源层43,p型Inx'Ga1-x'Asy'P1-y'缓冲层层44,在n型InP衬底41上形成p型In x Ga 1-x“As y”P 1-y覆盖层45;其中0 |
申请日期 | 1978-12-25 |
专利号 | JP1980086179A |
专利状态 | 失效 |
申请号 | JP1978158634 |
公开(公告)号 | JP1980086179A |
IPC 分类号 | H01L21/208 | H01S5/00 | H01S3/18 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/89879 |
专题 | 半导体激光器专利数据库 |
作者单位 | NIPPON TELEGRAPH & TELEPHONE |
推荐引用方式 GB/T 7714 | KOBAYASHI NAOKI,HORIKOSHI YOSHIHARU. Semiconductor laser. JP1980086179A[P]. 1980-06-28. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
JP1981036595B2.PDF(120KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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