Manufacture of semiconductor laser

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	Manufacture of semiconductor laser
其他题名	Manufacture of semiconductor laser
	SUGIMOTO MITSUNORI; NOMURA HIDENORI
	1982-02-25
专利权人	NIPPON ELECTRIC CO
公开日期	1982-02-25
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To eliminate leakage of current at both the sides of a laser beam oscillating layer of a semiconductor laser device by a method wherein after necessary semiconductor layers are made to grow epitaxially in order on a semiconductor substrate having a stripe type projection, current blocking layers of the same conductive type with the substrate are provided merely at both the sides of the stripe type projection. CONSTITUTION:On the N type InP substrate 20 having the stripe type projection 21, the N type InP layer 22 of N type side clad, the P type InP layer 24 of P type side clad, an active layer 23a on the projection 21 and active layers 23b on both the sides as to be placed between both the layers, are formed using the epitaxial growth technique. After the current blocking layer is made to grow liquid phase epitaxially on the upper part and on both the sides of the projection 21 using N type InP, the current blocking layer of the upper part of the projection 21 is dissolved to form the current blocking layers 25b memerly on both the side of the projection 2 Accordigly because a current flowed out from a P type electrode 27 flows almost to the active layer 23a and leakage of current to the active layers 23b on both the sides is eliminated, a reactive current component not to cotribute to laser oscillation can be eliminated, and the threshold current can be reduced.
其他摘要	目的：通过一种方法消除半导体激光器件的激光束振荡层两侧的电流泄漏，其中在必要的半导体层按顺序外延生长在具有条型投影的半导体衬底上之后，电流阻挡层在条形突起的两侧仅提供与基板相同导电类型的导电类型。组成：在具有条型投影21的N型InP基板20，N型侧面包层的N型InP层22，P型侧面包层的P型InP层24，在投影21上的有源层23a和有源层使用外延生长技术形成两侧上的层23b，以放置在两层之间。在使用N型InP使电流阻挡层在突起21的上部和两侧外延生长液相之后，突起21的上部的电流阻挡层溶解以形成电流阻挡层因此，从P型电极27流出的电流几乎流到有源层23a，并且消除了两侧的有源层23b的电流泄漏，无功电流分量。可以消除不对激光振荡的影响，并且可以降低阈值电流。
申请日期	1980-06-26
专利号	JP1982035391A
专利状态	失效
申请号	JP1980087050
公开（公告）号	JP1982035391A
IPC 分类号	H01L21/208 \| H01S5/00 \| H01S5/227 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/89854
专题	半导体激光器专利数据库
作者单位	NIPPON ELECTRIC CO
推荐引用方式 GB/T 7714	SUGIMOTO MITSUNORI,NOMURA HIDENORI. Manufacture of semiconductor laser. JP1982035391A[P]. 1982-02-25.

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