Xi'an Institute of Optics and Precision Mechanics,CAS
Method of and device for growing semiconductor compound | |
其他题名 | Method of and device for growing semiconductor compound |
JIYON HAIGU; MAAKU MARIAN FUAKUTAA; RODONII HORANZU MOSU | |
1979-10-01 | |
专利权人 | POST OFFICE |
公开日期 | 1979-10-01 |
授权国家 | 日本 |
专利类型 | 发明申请 |
摘要 | Semiconductor compounds which are alloys of group III-V compounds are grown by a liquid phase epitaxy method which includes heating growth apparatus in a reducing atmosphere while maintaining a solvent for the compound, a source of the group III-V compound and another element of the alloy separate from each other. After heating to reduce oxides, the element is added to the solvent, the source is brought into contact with the solvent and the resulting solution is brought into contact with a substrate to effect growth of the compound. Apparatus for carrying out the method is also described. |
其他摘要 | 作为III-V族化合物的合金的半导体化合物通过液相外延方法生长,该方法包括在还原气氛中加热生长装置,同时保持化合物的溶剂,III-V族化合物的来源和另一种元素。合金彼此分开。在加热以还原氧化物之后,将元素加入到溶剂中,使源与溶剂接触,使得到的溶液与基质接触以实现化合物的生长。还描述了用于执行该方法的装置。 |
申请日期 | 1979-03-07 |
专利号 | JP1979126464A |
专利状态 | 失效 |
申请号 | JP1979026597 |
公开(公告)号 | JP1979126464A |
IPC 分类号 | H01L33/00 | C30B19/00 | C30B19/02 | C30B19/04 | C30B19/06 | C30B19/08 | C30B29/40 | H01L21/208 | H01S5/00 | B01J17/06 | H01S3/18 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/89817 |
专题 | 半导体激光器专利数据库 |
作者单位 | POST OFFICE |
推荐引用方式 GB/T 7714 | JIYON HAIGU,MAAKU MARIAN FUAKUTAA,RODONII HORANZU MOSU. Method of and device for growing semiconductor compound. JP1979126464A[P]. 1979-10-01. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
US4307680.PDF(203KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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