Xi'an Institute of Optics and Precision Mechanics,CAS
Manufacture of semiconductor light emitting element | |
其他题名 | Manufacture of semiconductor light emitting element |
MATSUO NOZOMI; KAWAGUCHI MASAZUMI | |
1989-01-11 | |
专利权人 | 古河電気工業株式会社 |
公开日期 | 1989-01-11 |
授权国家 | 日本 |
专利类型 | 发明申请 |
摘要 | PURPOSE:To make it possible to control a diffusion front so that it is in a high degree of uniformity in its depth by forming an epitaxial film by an MOCVD technique, thereby forming an impurity diffusion region with a selective solid phase diffusion technique. CONSTITUTION:Laminated epitaxial layers are manufactured with an MOCVD (organometallic chemical vapor deposition) technique, that is, a vapor epitaxial growth technique which is performed according to the thermal decomposition reaction of II or III organic compounds and V or IV hydrogen compounds. Further, a doped oxide film 10 including diffused impurities is formed on an epitaxial and a stripe-like impurity diffusion region 7' is formed with a selective solid phase diffusion technique which performs heat treatment. Since a thermal treatment temperature in the case of diffusion can be suppressed at a low level, impurity distribution in crystals does not change during their thermal treatment and there is little or no change in the configuration of carrier concentration profile at a diffusion front. In this way, a high degree of uniformity in diffusion is attained. |
其他摘要 | 目的:通过MOCVD技术形成外延膜,从而可以控制扩散前沿,使其在深度上具有高度均匀性,从而形成具有选择性固相扩散技术的杂质扩散区。组成:层压外延层采用MOCVD(有机金属化学气相沉积)技术制造,即根据II或III有机化合物和V或IV氢化合物的热分解反应进行的气相外延生长技术。此外,在外延上形成包括扩散杂质的掺杂氧化物膜10,并且利用进行热处理的选择性固相扩散技术形成条状杂质扩散区7'。由于在扩散的情况下的热处理温度可以被抑制在低水平,因此晶体中的杂质分布在它们的热处理期间不会改变,并且在扩散前沿的载流子浓度分布的构造很少或没有变化。以这种方式,实现了高度均匀的扩散。 |
申请日期 | 1987-06-29 |
专利号 | JP1989007589A |
专利状态 | 失效 |
申请号 | JP1987161989 |
公开(公告)号 | JP1989007589A |
IPC 分类号 | H01S5/00 | H01S3/18 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/89784 |
专题 | 半导体激光器专利数据库 |
作者单位 | 古河電気工業株式会社 |
推荐引用方式 GB/T 7714 | MATSUO NOZOMI,KAWAGUCHI MASAZUMI. Manufacture of semiconductor light emitting element. JP1989007589A[P]. 1989-01-11. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
JP2599391B2.PDF(25KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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