Optoelectronic integrated circuit device

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	Optoelectronic integrated circuit device
其他题名	Optoelectronic integrated circuit device
	KURODA KENICHI; OOTA ATSUSHI
	1987-07-21
专利权人	MITSUBISHI ELECTRIC CORP
公开日期	1987-07-21
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To facilitate forming electrodes of a semiconductor laser part and a driving electronic device part on a same plane and facilitate photolithography by a method wherein a TJS type laser in which an anode and a cathode are provided in a same plane is employed as the semiconductor laser part and a part of the region other than the laser part is removed and the driving elec tronic device is formed on the part after removal. CONSTITUTION:An undoped AlGaAs layer 15, a lower cladding layer 16, an active layer 17, an upper cladding layer 18 and a cap layer 19 are formed over the whole surfaces of a semi-insulating substrate 14. The respective layers 15, 16, 17, 18 and 19 form a polycrystalline GaAs/AlGaAS layer 30 on a dielec tric film 29. Selective diffusion and driving of Zn are performed to form a TJS type semiconductor laser part 33. At that time, the surface of the semi- insulating substrate 14 under the dielectric film 29 is protected by the dielectric film 29. A part of the polycrystalline GaAs/AlGaAS layer 30 is removed by etching and a part of the semi-insulating substrate 14 is exposed and a high resistance AlGaAs layer 22 and an FET active layer 23 are selectively made to grow on that exposed surface to form an FET part 34 and further electrodes 24-28 are formed.
其他摘要	目的：为了便于在同一平面上形成半导体激光器部件和驱动电子器件部件的电极，并且通过其中将阳极和阴极设置在同一平面中的TJS型激光器用作半导体的方法来促进光刻激光部分和除激光部分以外的区域的一部分，并且在去除后的部分上形成驱动电子器件。结构：在半绝缘基板14的整个表面上形成未掺杂的AlGaAs层15，下覆层16，有源层17，上覆层18和覆盖层19.各层15,16， 17,18和19在介电膜29上形成多晶GaAs / AlGaAS层30.执行Zn的选择性扩散和驱动以形成TJS型半导体激光器部件33.此时，半绝缘衬底的表面14被电介质膜29保护。通过蚀刻去除多晶GaAs / AlGaAS层30的一部分，并且暴露半绝缘基板14的一部分，并且形成高电阻AlGaAs层22和FET有源层23选择性地在该暴露表面上生长以形成FET部分34，并且形成另外的电极24-28。
申请日期	1986-01-16
专利号	JP1987165386A
专利状态	失效
申请号	JP1986006868
公开（公告）号	JP1987165386A
IPC 分类号	H01L27/15 \| H01L27/095 \| H01L29/80 \| H01S5/00 \| H01S5/026 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/89672
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORP
推荐引用方式 GB/T 7714	KURODA KENICHI,OOTA ATSUSHI. Optoelectronic integrated circuit device. JP1987165386A[P]. 1987-07-21.

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