Semiconductor laser device

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	Semiconductor laser device
其他题名	Semiconductor laser device
	KOIZUMI YOSHIHIRO
	1989-10-19
专利权人	NEC CORP
公开日期	1989-10-19
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To improve such characteristics as a threshold current and an external differential quantum efficiency by a method wherein a buried layer which buries a mesa type active region is formed of a high-resistance semiconductor layer. CONSTITUTION:As the whole surface, which is located on both ends of a mesa, of an n-type substrate 17 is covered with a high-resistance semiconductor layer (Fe-doped InP layer) 13, a sufficient resistivity is obtained. Moreover, a p-type impurity forming region 10 is provided in the vicinity of a part, which comes into contact to an electrode 11, of an N-type low-resistance region on the sidewall of the mesa. As this region 10 exists, a p-n junction is formed between the region 10 and the low-resistance region on a path from the electrode 11 to lead to the substrate 17 via the N-type low-resistance region. Accordingly, in order to make a leakage current flow through the path from the electrode 11 to lead to the substrate 17 via the low-resistance region, a voltage higher than the diffusion potential of the p-n junction must be applied. As the diffusion potential in an active layer 16 is lower than that in the InP layer 13, a current first flows to the side of the layer 16 if a voltage is applied to a semiconductor laser. When the laser is oscillated, the current keeps flowing.
其他摘要	用途：通过一种方法改善阈值电流和外部微分量子效率等特性，其中掩埋台面型有源区的埋层由高阻半导体层形成。组成：当n型衬底17的位于台面两端的整个表面覆盖有高阻半导体层（Fe掺杂InP层）13，获得足够的电阻率。此外，p型杂质形成区域10设置在台面的侧壁上的N型低电阻区域的与电极11接触的部分附近。当存在该区域10时，在从电极11到经由N型低电阻区域引导到基板17的路径上的区域10和低电阻区域之间形成p-n结。因此，为了使漏电流从电极11流过经由低电阻区域到达基板17的路径，必须施加高于p-n结的扩散电位的电压。由于有源层16中的扩散电位低于InP层13中的扩散电位，如果向半导体激光器施加电压，则电流首先流到层16的侧面。当激光器振荡时，电流保持流动。
申请日期	1988-04-14
专利号	JP1989262687A
专利状态	失效
申请号	JP1988091939
公开（公告）号	JP1989262687A
IPC 分类号	H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/89604
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	KOIZUMI YOSHIHIRO. Semiconductor laser device. JP1989262687A[P]. 1989-10-19.

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