Manufacture of optical semiconductor device

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	Manufacture of optical semiconductor device
其他题名	Manufacture of optical semiconductor device
	YAMAZAKI SUSUMU; OKAZAKI JIRO
	1991-08-06
专利权人	FUJITSU LTD
公开日期	1991-08-06
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To eliminate defects such as recesses and cavities in a burying layer when an inverted mesa is buried in the burying layer formed by a vapor growth method by a method wherein the burying layer is composed of a semiconductor mixed crystal layer which has lattice matching with an InP substrate and contains As. CONSTITUTION:An n-type InP substrate is used as a substrate 1 and a guide layer 2, an active layer 3, a cladding layer 4 and a contact layer 5 are built up on the substrate The respective layers 2-5 have lattice matching with the n-type InP substrate An SiO2 layer 6 is formed on the contact layer 5 and a mesa-etching is performed by using the layer 6 as a mask to form an inverted mesa. Then an Al0.5In0.5As layer which has lattice matching with the n-type InP substrate 1 is built up around the inverted mesa and on the guide layer 2 to form a burying layer 7. The burying layer 7 obtained as described above has no contractional defects such as recesses and cavities and has a high resistivity not lower than 10OMEGA-cm.
其他摘要	用途：当通过气相生长法形成的掩埋层中埋入倒置台面时，消除掩埋层中的凹陷和空洞等缺陷，其中掩埋层由与晶格匹配的半导体混合晶体层构成。 InP衬底并含有As。组成：n型InP衬底用作衬底1和引导层2，有源层3，包层4和接触层5建立在基板1上。各层2-5具有晶格与n型InP衬底1匹配。在接触层5上形成SiO2层6，并通过使用层6作为掩模进行台面蚀刻以形成倒置台面。然后在倒置的台面周围和引导层2上建立与n型InP衬底1具有晶格匹配的Al0.5In0.5As层，以形成掩埋层7.如上所述获得的掩埋层7没有诸如凹陷和空腔的收缩缺陷并且具有不低于106Ω-cm的高电阻率。
申请日期	1989-12-08
专利号	JP1991180086A
专利状态	失效
申请号	JP1989319271
公开（公告）号	JP1991180086A
IPC 分类号	H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/89579
专题	半导体激光器专利数据库
作者单位	FUJITSU LTD
推荐引用方式 GB/T 7714	YAMAZAKI SUSUMU,OKAZAKI JIRO. Manufacture of optical semiconductor device. JP1991180086A[P]. 1991-08-06.

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