Xi'an Institute of Optics and Precision Mechanics,CAS
Manufacture of optical semiconductor device | |
其他题名 | Manufacture of optical semiconductor device |
YAMAZAKI SUSUMU; OKAZAKI JIRO | |
1991-08-06 | |
专利权人 | FUJITSU LTD |
公开日期 | 1991-08-06 |
授权国家 | 日本 |
专利类型 | 发明申请 |
摘要 | PURPOSE:To eliminate defects such as recesses and cavities in a burying layer when an inverted mesa is buried in the burying layer formed by a vapor growth method by a method wherein the burying layer is composed of a semiconductor mixed crystal layer which has lattice matching with an InP substrate and contains As. CONSTITUTION:An n-type InP substrate is used as a substrate 1 and a guide layer 2, an active layer 3, a cladding layer 4 and a contact layer 5 are built up on the substrate The respective layers 2-5 have lattice matching with the n-type InP substrate An SiO2 layer 6 is formed on the contact layer 5 and a mesa-etching is performed by using the layer 6 as a mask to form an inverted mesa. Then an Al0.5In0.5As layer which has lattice matching with the n-type InP substrate 1 is built up around the inverted mesa and on the guide layer 2 to form a burying layer 7. The burying layer 7 obtained as described above has no contractional defects such as recesses and cavities and has a high resistivity not lower than 10OMEGA-cm. |
其他摘要 | 用途:当通过气相生长法形成的掩埋层中埋入倒置台面时,消除掩埋层中的凹陷和空洞等缺陷,其中掩埋层由与晶格匹配的半导体混合晶体层构成。 InP衬底并含有As。组成:n型InP衬底用作衬底1和引导层2,有源层3,包层4和接触层5建立在基板1上。各层2-5具有晶格与n型InP衬底1匹配。在接触层5上形成SiO2层6,并通过使用层6作为掩模进行台面蚀刻以形成倒置台面。然后在倒置的台面周围和引导层2上建立与n型InP衬底1具有晶格匹配的Al0.5In0.5As层,以形成掩埋层7.如上所述获得的掩埋层7没有诸如凹陷和空腔的收缩缺陷并且具有不低于106Ω-cm的高电阻率。 |
申请日期 | 1989-12-08 |
专利号 | JP1991180086A |
专利状态 | 失效 |
申请号 | JP1989319271 |
公开(公告)号 | JP1991180086A |
IPC 分类号 | H01S5/00 | H01S3/18 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/89579 |
专题 | 半导体激光器专利数据库 |
作者单位 | FUJITSU LTD |
推荐引用方式 GB/T 7714 | YAMAZAKI SUSUMU,OKAZAKI JIRO. Manufacture of optical semiconductor device. JP1991180086A[P]. 1991-08-06. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
JP1991180086A.PDF(176KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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