Xi'an Institute of Optics and Precision Mechanics,CAS
Semiconductor laser device | |
其他题名 | Semiconductor laser device |
YOSHIZAWA MISUZU; YAMASHITA SHIGEO; OISHI AKIO; KAJIMURA TAKASHI | |
1988-08-29 | |
专利权人 | HITACHI LTD |
公开日期 | 1988-08-29 |
授权国家 | 日本 |
专利类型 | 发明申请 |
摘要 | PURPOSE:To obtain an element characterized by a low threshold current value and high reliability, by providing a light-intensity-distribution correcting layer in a self-alignment type semiconductor laser device having an interface improving layer, making the light-intensity distribution in the vertical direction with respect to a bonding surface to be a symmetrical pattern, and efficiently guiding the light to an active layer. CONSTITUTION:A layer having a small Al mol ratio, i.e., a light-intensity- distribution correcting layer 3, which is a layer, whose refractive index is larger than those of n-type clad layers 2 and 4, is provided on the sides of the n-type clad layers 2 and 4 like an interface improving layer 7. When the light-intensity- distribution correcting layer 3 is provided between the first n-GaAlAs clad layer 2 and the second n-GaAlAs clad layer 4, the distribution of the light intensity (c) in the vertical direction with respect to a bonding surface becomes symmetrical. Therefore the light can be guided to an active layer (e) efficiently. Thus the element characterized by a low threshold current value and high reliability can be obtained. |
其他摘要 | 目的:通过在具有界面改善层的自对准型半导体激光器件中提供光强度分布校正层,以获得特征在于低阈值电流值和高可靠性的元件,使得光强度分布在相对于接合表面的垂直方向是对称图案,并且有效地将光引导到有源层。组成:一个具有小Al摩尔比的层,即一个光强度分布校正层3,它是一个折射率大于n型包层2和4的层,在侧面提供在第一n-GaAlAs包覆层2和第二n-GaAlAs包覆层4之间设置光强度分布校正层3时,n型包层2和4的界面改善层7与第二n-GaAlAs包层4相同。相对于粘合表面,垂直方向上的光强度(c)变得对称。因此,可以有效地将光引导到有源层(e)。因此,可以获得以低阈值电流值和高可靠性为特征的元件。 |
申请日期 | 1987-02-25 |
专利号 | JP1988208290A |
专利状态 | 失效 |
申请号 | JP1987040231 |
公开(公告)号 | JP1988208290A |
IPC 分类号 | H01S5/00 | H01S3/18 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/89440 |
专题 | 半导体激光器专利数据库 |
作者单位 | HITACHI LTD |
推荐引用方式 GB/T 7714 | YOSHIZAWA MISUZU,YAMASHITA SHIGEO,OISHI AKIO,et al. Semiconductor laser device. JP1988208290A[P]. 1988-08-29. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
JP1988208290A.PDF(453KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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