Surface-emission semiconductor laser device

OPT OpenIR > 半导体激光器专利数据库

	Surface-emission semiconductor laser device
其他题名	Surface-emission semiconductor laser device
	YOKOUCHI, NORIYUKI; IWAI, NORIHIRO
	2008-10-16
专利权人	THE FURUKAWA ELECTRIC CO., LTD.
公开日期	2008-10-16
授权国家	美国
专利类型	发明申请
摘要	A surface-emitting semiconductor laser device includes a semi-insulating substrate, a layer structure with a bottom multilayer reflector, an n-type cladding layer, an active layer structure for emitting laser, a p-type cladding layer and a top multilayer reflector with a dielectric material, consecutively formed on the semi-insulating substrate, the active layer structure, the p-type cladding layer and the top multilayer reflector, configuring a mesa post formed on a portion of the n-type cladding layer, the p-type cladding layer or the p-type multilayer reflector. The surface-emitting semiconductor laser includes a p-side electrode formed on another portion of the p-type cladding layer, and an n-side electrode formed on another portion of the n-type cladding layer. The n-side electrode includes a substantially uniform Au film and AuGeNi film or AuGe film consecutively formed on the n-type cladding layer, and an alloy is formed between said Au film and said AuGeNi film or AuGe film.
其他摘要	一种表面发射半导体激光器件，包括半绝缘基板，具有底部多层反射器的层结构，n型包覆层，用于发射激光的有源层结构，p型包覆层和具有顶部多层反射器。在半绝缘基板，有源层结构，p型包覆层和顶部多层反射器上连续形成的介电材料，构成在n型包覆层的一部分上形成的台面柱，p型包层或p型多层反射器。表面发射半导体激光器包括形成在p型包覆层的另一部分上的p侧电极，以及形成在n型包覆层的另一部分上的n侧电极。 n侧电极包括在n型包覆层上连续形成的基本均匀的Au膜和AuGeNi膜或AuGe膜，并且在所述Au膜和所述AuGeNi膜或AuGe膜之间形成合金。
申请日期	2008-04-15
专利号	US20080254566A1
专利状态	失效
申请号	US12/103142
公开（公告）号	US20080254566A1
IPC 分类号	H01L21/00 \| H01S5/00
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/89348
专题	半导体激光器专利数据库
作者单位	THE FURUKAWA ELECTRIC CO., LTD.
推荐引用方式 GB/T 7714	YOKOUCHI, NORIYUKI,IWAI, NORIHIRO. Surface-emission semiconductor laser device. US20080254566A1[P]. 2008-10-16.