Xi'an Institute of Optics and Precision Mechanics,CAS
Surface-emission semiconductor laser device | |
其他题名 | Surface-emission semiconductor laser device |
YOKOUCHI, NORIYUKI; IWAI, NORIHIRO | |
2008-10-16 | |
专利权人 | THE FURUKAWA ELECTRIC CO., LTD. |
公开日期 | 2008-10-16 |
授权国家 | 美国 |
专利类型 | 发明申请 |
摘要 | A surface-emitting semiconductor laser device includes a semi-insulating substrate, a layer structure with a bottom multilayer reflector, an n-type cladding layer, an active layer structure for emitting laser, a p-type cladding layer and a top multilayer reflector with a dielectric material, consecutively formed on the semi-insulating substrate, the active layer structure, the p-type cladding layer and the top multilayer reflector, configuring a mesa post formed on a portion of the n-type cladding layer, the p-type cladding layer or the p-type multilayer reflector. The surface-emitting semiconductor laser includes a p-side electrode formed on another portion of the p-type cladding layer, and an n-side electrode formed on another portion of the n-type cladding layer. The n-side electrode includes a substantially uniform Au film and AuGeNi film or AuGe film consecutively formed on the n-type cladding layer, and an alloy is formed between said Au film and said AuGeNi film or AuGe film. |
其他摘要 | 一种表面发射半导体激光器件,包括半绝缘基板,具有底部多层反射器的层结构,n型包覆层,用于发射激光的有源层结构,p型包覆层和具有顶部多层反射器。在半绝缘基板,有源层结构,p型包覆层和顶部多层反射器上连续形成的介电材料,构成在n型包覆层的一部分上形成的台面柱,p型包层或p型多层反射器。表面发射半导体激光器包括形成在p型包覆层的另一部分上的p侧电极,以及形成在n型包覆层的另一部分上的n侧电极。 n侧电极包括在n型包覆层上连续形成的基本均匀的Au膜和AuGeNi膜或AuGe膜,并且在所述Au膜和所述AuGeNi膜或AuGe膜之间形成合金。 |
申请日期 | 2008-04-15 |
专利号 | US20080254566A1 |
专利状态 | 失效 |
申请号 | US12/103142 |
公开(公告)号 | US20080254566A1 |
IPC 分类号 | H01L21/00 | H01S5/00 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/89348 |
专题 | 半导体激光器专利数据库 |
作者单位 | THE FURUKAWA ELECTRIC CO., LTD. |
推荐引用方式 GB/T 7714 | YOKOUCHI, NORIYUKI,IWAI, NORIHIRO. Surface-emission semiconductor laser device. US20080254566A1[P]. 2008-10-16. |
条目包含的文件 | 条目无相关文件。 |
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