Formation of quantum fine wire

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	Formation of quantum fine wire
其他题名	Formation of quantum fine wire
	KODAMA KUNIHIKO
	1990-06-22
专利权人	FUJITSU LTD
公开日期	1990-06-22
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To form the arrangement of a quantum fine wire, having the width of several atomic layers in the same thickness as the stepping of crystal face, in a highly precise manner by a method wherein a quantum well semiconductor layer, which is epitaxially grown, is formed by controlling its thickness and width smaller than the de Broglie wavelength. CONSTITUTION:The crystal face of a substrate is formed into a face (111)B which is inclined in orientation . As a result, the substrate surface is turned to the face (111)B having a stepping periodically. The side face constituting the stepping is a face (110). In the first atomic layer epitaxy, a semiconductor layer having a wide forbidden band width, which becomes the barrier of quantum well, is deposited. As it is an isotropic qrawing method, the stepping on the substrate crystal surface is in the state as it is. When a semiconductor, which becomes a confinement layer, is coated thereon using an anisotropic crystal growth method, no crystal growth progresses on the face (111)B, and crystal growth progresses only on the face (110) of the stepped part. As a result, a confinement layer, having the controlled atomic column number in lateral direction, is formed in the thickness same as the stepping. In the subsequently conducted atomic layer epitaxy, the barrier layer of a quantum well is formed enveloping the formed carrier confinement layer, and a quantum fine line is formed.
其他摘要	目的：通过一种外延生长的量子阱半导体层的方法，以高精度的方式形成量子细线的排列，其具有与晶面步进相同厚度的几个原子层的宽度，通过控制其厚度和宽度小于德布罗意波长来形成。组成：基板的晶面形成面（111）B，面（111）B倾斜方向。结果，基板表面转向具有周期性踩踏的面（111）B。构成踩踏的侧面是面（110）。在第一原子层外延中，沉积具有宽禁带宽度的半导体层，其成为量子阱的势垒。由于它是各向同性的拉伸方法，基板晶体表面上的踩踏处于原样状态。当使用各向异性晶体生长方法在其上涂覆成为限制层的半导体时，在面（111）B上不进行晶体生长，并且晶体生长仅在阶梯部分的面（110）上进行。结果，在横向上具有受控原子柱数的限制层形成为与踩踏相同的厚度。在随后进行的原子层外延中，形成量子阱的势垒层，包围形成的载流子限制层，并形成量子细线。
申请日期	1988-12-15
专利号	JP1990162717A
专利状态	失效
申请号	JP1988318824
公开（公告）号	JP1990162717A
IPC 分类号	H01L29/201 \| H01L21/20 \| H01L21/205 \| H01L29/04 \| H01L29/06 \| H01L29/12 \| H01S5/00 \| H01S5/34 \| H01L29/203 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/89335
专题	半导体激光器专利数据库
作者单位	FUJITSU LTD
推荐引用方式 GB/T 7714	KODAMA KUNIHIKO. Formation of quantum fine wire. JP1990162717A[P]. 1990-06-22.

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