OPT OpenIR  > 半导体激光器专利数据库
Single mode semiconductor laser device
其他题名Single mode semiconductor laser device
MICHITSUJI YASUNORI; YAMAZOE YOSHIMITSU
1989-11-22
专利权人SUMITOMO ELECTRIC IND LTD
公开日期1989-11-22
授权国家日本
专利类型发明申请
摘要PURPOSE:To keep an oscillation mode constant, by connecting a specific inductance in series to a control current which is applied to a waveguide part with a common power source, thereby interposing a resistance between the power source and a control electrode. CONSTITUTION:An exciting current passes the first chip resistance 11 and a wire 4 and then, excites the active part of a laser element A current flowing in a waveguide passes an inductance 14 for cutting off high frequencies and a resistance 12 and further, is injected into the active part of the laser element 1 through a wire 5 to generate optical signals which are modulated by the signals to be transmitted. Then, electrodes 2 and 3 are mounted at both active and waveguide parts of a single mode laser possessing the active and waveguide parts and this device permits a control current J to apply to the waveguide part. Although the control current J uses the same power source as that of the exciting current I, the inductance and resistance of 2nH or more are interposed between the above power source and control electrodes. Light-emitting wavelengths thus become stable and no mode jump takes place according to electric currents.
其他摘要目的:通过将特定电感串联连接到控制电流来保持振荡模式恒定,控制电流施加到具有共用电源的波导部分,从而在电源和控制电极之间插入电阻。组成:激励电流通过第一个芯片电阻11和导线4,然后激发激光元件1的有源部分。在波导中流动的电流通过电感14,用于切断高频和电阻12,此外,通过导线5将激光元件1注入激光元件1的有源部分,以产生光信号,该光信号由待传输的信号调制。然后,电极2和3安装在具有有源和波导部分的单模激光器的有源和波导部分上,并且该装置允许控制电流J施加到波导部分。尽管控制电流J使用与激励电流I相同的电源,但是在上述电源和控制电极之间插入2nH或更大的电感和电阻。因此,发光波长变得稳定,并且根据电流不会发生模式跳变。
申请日期1988-05-18
专利号JP1989290278A
专利状态失效
申请号JP1988121346
公开(公告)号JP1989290278A
IPC 分类号H01S5/00 | H01S5/068 | H01S3/133 | H01S3/18
专利代理人-
代理机构-
文献类型专利
条目标识符http://ir.opt.ac.cn/handle/181661/89278
专题半导体激光器专利数据库
作者单位SUMITOMO ELECTRIC IND LTD
推荐引用方式
GB/T 7714
MICHITSUJI YASUNORI,YAMAZOE YOSHIMITSU. Single mode semiconductor laser device. JP1989290278A[P]. 1989-11-22.
条目包含的文件
文件名称/大小 文献类型 版本类型 开放类型 使用许可
JP1989290278A.PDF(419KB)专利 开放获取CC BY-NC-SA请求全文
个性服务
推荐该条目
保存到收藏夹
查看访问统计
导出为Endnote文件
谷歌学术
谷歌学术中相似的文章
[MICHITSUJI YASUNORI]的文章
[YAMAZOE YOSHIMITSU]的文章
百度学术
百度学术中相似的文章
[MICHITSUJI YASUNORI]的文章
[YAMAZOE YOSHIMITSU]的文章
必应学术
必应学术中相似的文章
[MICHITSUJI YASUNORI]的文章
[YAMAZOE YOSHIMITSU]的文章
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。