Surface-emitting type semiconductor laser device

OPT OpenIR > 半导体激光器专利数据库

	Surface-emitting type semiconductor laser device
其他题名	Surface-emitting type semiconductor laser device
	IGA KENICHI; FURUSAWA KOTARO; IBARAKI AKIRA; ISHIKAWA TORU
	1991-12-13
专利权人	科学技術振興事業団
公开日期	1991-12-13
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To sharply improve a semiconductor laser of this design in heat dissipating property by a method wherein a heat diffusion layer is interposed between an active region of a semiconductor multilayer film and a GaAs substrate. CONSTITUTION:An area light emitting type semiconductor laser device is assembled in a structure of so-called junction-up type where a heat sink is provided under an electrode 13, a voltage is applied between electrodes 12 and 13 in this state to enable an active region 5 to emit light, resonance is made to start between a reflecting mirror 3 of semiconductor multilayered film and a reflecting mirror 10 of dielectric multilayered film, and a laser beam is emitted as shown by an arrow. Heat released from the active region 5 is conducted to an AlAs heat diffusion layer 2 through the reflecting mirror 3, diffused by the layer 2, conducted to a GaAs substrate 1, and dissipated through a heat sink. Heat of the active region 5 is released only from a prism whose diameter is D.
其他摘要	目的：通过在半导体多层膜的有源区和GaAs衬底之间插入热扩散层的方法，急剧改善该设计的半导体激光器的散热性能。组成：区域发光型半导体激光器件组装成所谓的结合型结构，其中散热器设置在电极13下面，在这种状态下在电极12和13之间施加电压以使激活在发光的区域5中，在半导体多层膜的反射镜3和电介质多层膜的反射镜10之间开始共振，并且如箭头所示发射激光束。从有源区5释放的热量通过反射镜3传导到AlAs热扩散层2，由层2扩散，传导到GaAs衬底1，并通过散热器散发。仅从直径为D的棱镜释放有源区5的热量。
申请日期	1990-03-29
专利号	JP1991283480A
专利状态	失效
申请号	JP1990083646
公开（公告）号	JP1991283480A
IPC 分类号	H01S5/00 \| H01S5/183 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/89234
专题	半导体激光器专利数据库
作者单位	科学技術振興事業団
推荐引用方式 GB/T 7714	IGA KENICHI,FURUSAWA KOTARO,IBARAKI AKIRA,et al. Surface-emitting type semiconductor laser device. JP1991283480A[P]. 1991-12-13.

条目包含的文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
JP1991283480A.PDF（183KB）	专利		开放获取	CC BY-NC-SA	请求全文