Semiconductor laser and manufacture thereof

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	Semiconductor laser and manufacture thereof
其他题名	Semiconductor laser and manufacture thereof
	SUZUKI YASUHIRO; MIKAMI OSAMU
	1991-02-14
专利权人	NIPPON TELEGR & TELEPH CORP
公开日期	1991-02-14
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To facilitate manufacture and to increase an efficiency of coupling to an optical fiber by a method wherein an active region of a semiconductor laser is formed of a superlattice structure and a part of an active layer is made to be a semiconductor crystal turned into a mixed crystal by mixing in of an impurity, while d waveguide region being adjacent to the direction of emission of the active region is made to be a semiconductor crystal turned into a mixed crystal without mixing the impurity in a superlattice layer. CONSTITUTION:An N-type clad layer 2, a superlattice layer 3 to be an active layer and a waveguide layer, an upper clad layer 5 and a cap layer 6 are made to grow epitaxially on a substrate 1 by using a crystallization method of molecular beam epitaxy or the like. SiO2 is deposited by a plasma CVD method or the like and the upper part of a laser region is removed by a technique of photolithography or reactive ion etching. Heat treatment is applied in a state wherein the superlattice side patterned by the SiO2 and another GaAs wafer are superposed, a superlattice in the lower part of an SiO2 film is thereby turned into a mixed crystal partially, so as to form the waveguide layer 4, and a workpiece thus prepared is sealed in an ampule of ZnAs2 and SiO2 and subjected to heat treatment. Then, the SiO2 is removed, a P-type electrode 7 is evaporated, and lastly an N-type electrode is evaporated on the reverse surface of the substrate
其他摘要	目的：通过一种方法制造和提高耦合到光纤的效率，其中半导体激光器的有源区由超晶格结构形成，而有源层的一部分被制成半导体晶体，形成一个半导体晶体。通过混入杂质混合晶体，同时使与有源区的发射方向相邻的d波导区成为变为混晶的半导体晶体，而不混合超晶格层中的杂质。组成：通过使用分子的结晶方法，在基板1上外延生长N型包层2，作为有源层和波导层的超晶格层3，上包层5和盖层6外延生长在基板1上。束外延等。通过等离子体CVD法等沉积SiO 2，并且通过光刻或反应离子蚀刻技术去除激光区域的上部。在由SiO 2和另一个GaAs晶片图案化的超晶格侧重叠的状态下进行热处理，从而在SiO 2膜的下部的超晶格部分地变成混晶，从而形成波导层4，将如此制备的工件密封在ZnAs2和SiO2的安瓿中并进行热处理。然后，除去SiO 2，蒸发P型电极7，最后在基板1的背面蒸发N型电极。
申请日期	1989-06-30
专利号	JP1991034485A
专利状态	失效
申请号	JP1989166787
公开（公告）号	JP1991034485A
IPC 分类号	H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/89232
专题	半导体激光器专利数据库
作者单位	NIPPON TELEGR & TELEPH CORP
推荐引用方式 GB/T 7714	SUZUKI YASUHIRO,MIKAMI OSAMU. Semiconductor laser and manufacture thereof. JP1991034485A[P]. 1991-02-14.

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