Semiconductor laser element and its manufacture

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	Semiconductor laser element and its manufacture
其他题名	Semiconductor laser element and its manufacture
	EGUCHI KAZUHIRO
	1989-07-10
专利权人	株式会社東芝
公开日期	1989-07-10
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To reduce a series resistance value of a laser element by manufacturing a double-heterojunction semiconductor laser element by using a structure where an InAs layer whose band gap is small is formed as a contact layer and an InAs1-zPz composition transition layer is formed between an InAs contact layer and an InP clad layer. CONSTITUTION:In order to use InAs whose band gap is small as a contact layer 18, the height of a Schottky barrier can be lowered and an impurity of high concentration can be doped. An InAs1-zPz layer 17 is formed between an InP layer 14 and the InAs layer 18, and its composition is changed gradually from InP to InAs; by this setup, the band gap can be changed continuously between InP and InAs; obstruction of a movement of a carrier due to discontinuity of a band is eliminated. In this way, a low-resistance electrode 20 can be formed with reference to a P-type; a series resistance value of a laser element can be lowered.
其他摘要	用途：通过使用其带隙小的InAs层形成为接触层并形成InAs1-zPz组分过渡层的结构，通过制造双异质结半导体激光元件来降低激光元件的串联电阻值在InAs接触层和InP包层之间。组成：为了使用带隙小的InAs作为接触层18，可以降低肖特基势垒的高度，并且可以掺杂高浓度的杂质。在InP层14和InAs层18之间形成InAs1-zPz层17，并且其组成从InP逐渐变为InAs;通过这种设置，可以在InP和InAs之间连续改变带隙;消除了由于带的不连续而妨碍载体移动。以这种方式，可以参考P型形成低电阻电极20;可以降低激光元件的串联电阻值。
申请日期	1987-12-28
专利号	JP1989173685A
专利状态	失效
申请号	JP1987329989
公开（公告）号	JP1989173685A
IPC 分类号	H01L21/205 \| H01S5/00 \| H01S5/042 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/89150
专题	半导体激光器专利数据库
作者单位	株式会社東芝
推荐引用方式 GB/T 7714	EGUCHI KAZUHIRO. Semiconductor laser element and its manufacture. JP1989173685A[P]. 1989-07-10.

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