Semiconductor device and method of fabricating semiconductor device

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	Semiconductor device and method of fabricating semiconductor device
其他题名	Semiconductor device and method of fabricating semiconductor device
	YASUTOMO KAJIKAWA
	1997-03-26
专利权人	MITSUBISHI DENKI KABUSHIKI KAISHA
公开日期	1997-03-26
授权国家	英国
专利类型	发明申请
摘要	A semiconductor device, such as a p-HEMT or a quantum well laser, includes a semiconductor base substrate (101 or 121) having a lattice constant and a surface; and a strained layer (3 or 24) grown on the surface of the semiconductor base substrate and comprising a semiconductor having a zinc-blende crystal structure with a lattice constant different from that of the semiconductor base substrate. The interface between the semiconductor base substrate and the strained layer is in a crystal plane which satisfies the relationship of (1 - * small Greek nu * cos 2 * small Greek alpha )/cos small Greek lambda * > 2(1 - * small Greek nu /4), where small Greek nu * is the Poisson ratio, * small Greek alpha * is the angle between the Burgers vector and the dislocation line, and * small Greek lambda * is the angle between the Burgers vector and the direction in the interface, normal to the dislocation line, and the strained layer is epitaxially grown on the surface of the semiconductor base substrate without generating lattice-mismatch dislocations. When a strained InGaAs layer grown as described above is employed as a channel layer of a p-HEMT, the In composition of this layer becomes larger than that of a channel layer grown on a (001)-oriented substrate, without generating dislocations, whereby the electron mobility in the channel layer is increased and the noise characteristics in high frequency bands are improved. Further, since the thickness of the channel layer becomes thicker than that of a channel layer grown on a (001)-oriented substrate, without generating dislocations, the sheet electron concentration is increased, whereby the high-output characteristics of the p-HEMT are improved.
其他摘要	半导体器件，例如p-HEMT或量子阱激光器，包括具有晶格常数和表面的半导体基础衬底（101或121）;和应变层（3或24），其生长在半导体基础衬底的表面上，并且包括具有闪锌矿晶体结构的半导体，晶格常数不同于半导体基础衬底的晶格常数。半导体基础衬底和应变层之间的界面处于晶面中，其满足（1 - 小希腊nu cos 2 小希腊字母）/ cos 小希腊lambda > 2（1 - ）的关系小希腊语nu / 4），其中小希腊语nu 是泊松比，小希腊语alpha 是Burgers向量和位错线之间的角度，小希腊语lambda 是Burgers向量和该在界面中的方向，垂直于位错线，并且应变层外延生长在半导体基础衬底的表面上，而不产生晶格失配位错。当采用如上所述生长的应变InGaAs层作为p-HEMT的沟道层时，该层的In组分变得大于在（001）取向的衬底上生长的沟道层的In组分，而不产生位错，由此沟道层中的电子迁移率增加，并且高频带中的噪声特性得到改善。此外，由于沟道层的厚度变得比在（001）取向的衬底上生长的沟道层的厚度厚，所以不产生位错，片电子浓度增加，由此p-HEMT的高输出特性是改进。
申请日期	1996-07-30
专利号	GB2304998A
专利状态	失效
申请号	GB1996015935
公开（公告）号	GB2304998A
IPC 分类号	H01S5/34 \| H01S5/343 \| H01L29/778 \| H01S5/32 \| H01L21/70 \| H01L21/20 \| H01S5/00 \| H01L21/02 \| H01L21/335 \| H01S5/223 \| H01L29/66 \| H01L21/8252 \| H01S3/19
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/89021
专题	半导体激光器专利数据库
作者单位	MITSUBISHI DENKI KABUSHIKI KAISHA
推荐引用方式 GB/T 7714	YASUTOMO KAJIKAWA. Semiconductor device and method of fabricating semiconductor device. GB2304998A[P]. 1997-03-26.

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