Xi'an Institute of Optics and Precision Mechanics,CAS
Semiconductor laser | |
其他题名 | Semiconductor laser |
TAKAMIYA SABURO; YAGI TETSUYA | |
1988-04-21 | |
专利权人 | MITSUBISHI ELECTRIC CORP |
公开日期 | 1988-04-21 |
授权国家 | 日本 |
专利类型 | 发明申请 |
摘要 | PURPOSE:To obtain a semiconductor laser having a stable lateral mode, small astigmatism aberration and a longitudinally multiple mode difficult to be affected by the external return of light by providing optically discontinuous sections in part of the active layer of a refractive index wave guiding type semiconductor laser. CONSTITUTION:Optically discontinuous sections are provided in part of an active layer 3 of a semiconductor laser having a refractive index wave guiding type resonator structure. For instance, a groove 12 is formed in an N-GaAs substrate 10, and if an M-Al0.4Ga0.6As clad layer 4 and an Al0.1Ga0.9As active layer 3 are formed thereon by means of the molecular beam epitaxial method or the like, sharp bends B1, B2 are made in the active layer 3 depending on the groove 12. Then, after the width of the active layer 3 is made to have a predetermined value by etching, a P-Al0.4Ga0.6 As clad layer 2 and a P-GaAs light absorbing layer 9 are grown by the liquid phase epitaxy. with this, the wave-guided light once runs out from the active layer to other layers at the optical discontinuous sections and is wave-guided again to the active layer through the other layers, so part of that light is absorbed in the other layers to increase the internal loss, thereby accomplishing the longitudinally multiple mode. |
其他摘要 | 目的:通过在折射率波导型半导体的有源层的一部分中提供光学不连续部分,获得具有稳定横向模式的半导体激光器,小的像散像差和纵向多重模式难以受到光的外部返回的影响激光。组成:光学不连续部分设置在具有折射率波导型谐振器结构的半导体激光器的有源层3的一部分。例如,在N-GaAs衬底10中形成沟槽12,并且如果通过分子束外延方法在其上形成M-Al0.4Ga0.6As包层4和Al0.1Ga0.9As有源层3根据沟槽12,在有源层3中形成尖锐的弯曲B1,B2。然后,在通过蚀刻使有源层3的宽度具有预定值之后,使用P-Al0.4Ga0.6。由于包层2和P-GaAs光吸收层9通过液相外延生长。这样,波导光一旦从有源层流出到光学不连续部分的其他层,并通过其他层再次波导到有源层,因此部分光被其他层吸收到增加内部损失,从而完成纵向多重模式。 |
申请日期 | 1986-10-03 |
专利号 | JP1988090880A |
专利状态 | 失效 |
申请号 | JP1986236455 |
公开(公告)号 | JP1988090880A |
IPC 分类号 | H01S5/00 | H01S3/18 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/88861 |
专题 | 半导体激光器专利数据库 |
作者单位 | MITSUBISHI ELECTRIC CORP |
推荐引用方式 GB/T 7714 | TAKAMIYA SABURO,YAGI TETSUYA. Semiconductor laser. JP1988090880A[P]. 1988-04-21. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
JP1988090880A.PDF(198KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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