Semiconductor light-emitting device

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	Semiconductor light-emitting device
其他题名	Semiconductor light-emitting device
	YOKOZUKA TATSUO; TAKAMORI AKIRA
	1991-11-26
专利权人	MATSUSHITA ELECTRIC IND CO LTD
公开日期	1991-11-26
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To prevent decrease in laser characteristics caused by oxidation of an active layer and prevent lifetime from shortening by forming clad layers, which have lattice-matched structures with a substrate and the band gaps of which are at least 0.25eV larger than that of the active layer. CONSTITUTION:In a structure consisting of an n-type electrode 18, a GaAs substrate 17, an n-AlGaInP clad layer 16, an undoped GayIn1-yP active layer 15, a p-AlGaInP clad layer 14, etc., the layers 14 and 16 are lattice-matched with the substrate 17 and the layer 15 is made of a distorted lattice structure. The layer 15 is lattice-matched with the substrate 17 composed of (AlxGa1-x)0.5 In0.5P (0<=x<=1) and the band gaps of the layers 14 and 16 are at least 0.25eV larger than that of the layer 15. Thereby a semiconductor light-emitting device having an oscillation wavelength under 0.67mum is obtained with the layer 15 not containing aluminum and the layer 15 is hardly oxidized even at a high operation temperature because the layer 15 does not contain aluminum. Therefore, characteristics do not decrease, lifetime is lengthened, and low power consumption coherent light is obtained.
其他摘要	用途：为防止有源层氧化引起的激光特性降低，并通过形成包层，防止寿命缩短，包层与基板晶格匹配，其带隙至少比基板厚0.25eV。活动层。组成：在由n型电极18，GaAs衬底17，n-AlGaInP覆层16，未掺杂的GayIn1-yP有源层15，p-AlGaInP覆层14等组成的结构中，层14 16和16与基板17晶格匹配，层15由扭曲的晶格结构制成。层15与由（AlxGa1-x）0.5In0.5P（0 <= x <= 1）组成的衬底17晶格匹配，并且层14和16的带隙比至少0.25eV大至少0.25eV。由此，由于层15不含铝，因此在不含铝的层15中获得振荡波长小于0.67μm的半导体发光器件，并且即使在高操作温度下层15也几乎不被氧化。因此，特性不会降低，寿命延长，并且获得低功耗的相干光。
申请日期	1990-03-15
专利号	JP1991265184A
专利状态	失效
申请号	JP1990064654
公开（公告）号	JP1991265184A
IPC 分类号	H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/88835
专题	半导体激光器专利数据库
作者单位	MATSUSHITA ELECTRIC IND CO LTD
推荐引用方式 GB/T 7714	YOKOZUKA TATSUO,TAKAMORI AKIRA. Semiconductor light-emitting device. JP1991265184A[P]. 1991-11-26.

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